Function：Direct-write lithography for nanoscale structures on substrates up to 8 inches

Function：180nm semiconductor process node lithography process

Function：800nm~Photolithography of Micron-scale Micro-nano Structures and Device Patterns

Function：1.Micro-nano structure and device pattern lithography; 2.Double-sided alignment lithography.

Function：1.Substrate: silicon,glass,etc.; 2.Photolithography of micro-nano structures and device patterns; 3.Double-sided alignment photolithography.

Function：1.Double-sided photolithography patterning for wafers and fragments of 6 inches and below.
2.Minimum pattern resolution down to 0.8μm.
3.Provides high-precision alignment for bonded wafers and chips in conjunction with wafer bonding systems.
4.Can be matched with the EVG-510 bonder to realize wafer alignment and positioning functions.