| Model： | MA6/BA6 |
|---|---|
| Function： | 1.Substrate: silicon,glass,etc.; 2.Photolithography of micro-nano structures and device patterns; 3.Double-sided alignment photolithography. |
| Engineer： | Zhang / +86-21-34206126-6029 / captianzhangdi@1 |
| Location： | West Area,Lithography Zone I |
| Equipment ID： | EPHSMAL01 |
Including wafer lithography patterning, overlay alignment, thin film patterning, etc., supporting R&D and production in fields such as MEMS, semiconductors and optoelectronics.
Exposure of micron-scale structural patterns in micro-nano device fabrication, resolution: 0.8μm, front-side alignment accuracy: ±0.5μm, back-side alignment accuracy: ±1μm, supports 6-inch, 4-inch and fragmented wafers below 6 inches.
Its working principle is to expose the pattern on the photomask onto the spin-coated photosensitive material by controlling light intensity and time, and then transfer the pattern to the substrate after development.
Minimum Line Width 1um
Semiconductor standard silicon wafers or glass wafers.
4-inch photomasks.
3-inch test wafers.
For samples ≤ 6", dry solids, preheat for 10 minutes after turning on the light box power supply, and preheat for 10 minutes after turning on the mercury lamp. Please keep the machine clean and tidy after use.
The mercury lamp needs to be replaced.
Address: 800 Dongchuan Road, Minhang District, Shanghai 200240, China
Tel: +86 21 3420 7734
Email: aemd@sjtu.edu.cn
