| Model： | MA8/BA8 |
|---|---|
| Function： | 800nm~Photolithography of Micron-scale Micro-nano Structures and Device Patterns |
| Engineer： | Wang / +86-21-34206126-6005 / fdwang@1 |
| Location： | East Area,Lithography Zone ⅢA |
| Equipment ID： | ELT3MA801 |
Processing micron-scale structural patterns in micro-nano devices involves transferring the designed circuit patterns onto a substrate, and then transforming them into actual circuit patterns through processes such as etching.
Exposure of micron-scale structural patterns in micro-nano device fabrication, resolution: 0.8μm, front-side alignment accuracy: ±0.5μm, back-side alignment accuracy: ±1μm, supporting 6-inch, 4-inch and fragmented wafers below 8 inches.
Resolution:0.8μm, front registration accuracy: ±0.5μm, back registration accuracy: ±1μm, supports 6-inch, 4-inch and fragmented wafers below 8 inches.
Its working principle is to control the light intensity and time to expose the pattern on the photomask onto the spin-coated photosensitive material, and then realize the transfer of the pattern to the substrate after development.
MEMS process manufacturing, advanced packaging, microfluidics, optical device fabrication, RDL wiring, and basic research and development, etc.
1. Supports wafers and fragments smaller than 8 inches. Both the front and back sides of the samples must remain flat, clean and tidy. The complete process includes photoresist spin-coating, hot plate baking, development and observation under an ordinary microscope.
2. Fees for special photoresists are charged separately.
3. Fees for thick photoresist processes are charged separately.
4. Substrates and photomasks are not included.
5.Photomask size requirements: support for 5", 7" and 9" photomasks.
Please clean the back of the film in time.
Address: 800 Dongchuan Road, Minhang District, Shanghai 200240, China
Tel: +86 21 3420 7734
Email: aemd@sjtu.edu.cn
