• Model:HSE200

    Status: Operating

    Function:1.Deep silicon etching using Bosch or non-Bosch processes. 2.TSV (Through-Silicon Via) deep silicon etching. 3.Surface silicon structure etching for SOI wafers.

    East Area, Thin Film IV Zone+86-21- 34206126-6013
  • Model:ICP-SR

    Status: Operating

    Function:1. Deep silicon etching using Bosch or non-Bosch processes 2. TSV (Through-Silicon Via) deep silicon etching 3. Surface silicon structure etching for SOI wafers

    West Area, Thin Film II Zone+86-21- 34206126-6013
  • Model:DSE200s

    Status: Operating

    Function:1.Deep silicon etching using Bosch or non-Bosch processes 2.TSV (Through-Silicon Via) deep silicon etching 3.Surface silicon structure etching for SOI wafers

    West Area, Thin Film II Zone+86-21- 34206126-6013
  • Model:C200

    Status: Commissioning

    Function:1.Etching of dielectric thin films such as silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon oxynitride (SiON). 2.Etching of silicon carbide (SiC) thin films. 3.Quartz etching.

    East Area, Thin Film III Zone+86-21- 34206126-6013
  • Model:GSE200plus

    Status: Operating

    Function:1.Etching of dielectric thin films such as silicon dioxide (SiO₂), silicon nitride (Si₃N₄), and silicon oxynitride (SiON) 2.Etching of silicon carbide (SiC) thin films 3.Quartz etching

    West Area, Thin Film II Zone+86-21- 34206126-6013
  • Model:NLD570

    Status: Commissioning

    Function:Dry etching system primarily used for high-aspect-ratio etching of quartz and lithium niobate (LiNbO₃) materials.

    East Area, Thin Film IV Zone+86-21- 34206126-6013
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