• Model:Xactix® e1

    Status: Operating

    Function:XeF₂ (Xenon Difluoride) silicon etching is a dry etching technology based on gas-phase chemical reactions. It features mild etching conditions and excellent selectivity, with a high etching selectivity ratio against metals, silicon dioxide, and silicon nitride.

    East Area, Thin Film IV Zone+86-21- 34206126-6020
  • Model:ION wave10

    Status: Operating

    Function:1.Photoresist ashing (stripping) after dry etching;2.Plasma modification on substrate surface;3. Substrate cleaning before photoresist coating to remove organic contaminants.

    Thin Film Zone II, West Area+86-21- 34206126-6013
  • Model:Ion Wave 10

    Status: Operating

    Function:1. Dry removal of positive and negative (SU8) photoresists;2. Dry removal of polyimide (PI);3. Dry removal of organic contaminants;4. Substrate surface plasma modification (O₂/Ar);5. Surface cleaning, activation, etching and modification.

    Thin Film Zone II, West Area+86-21- 34206126-6029
  • Model:PDC002

    Status: Operating

    Function:1. Plasma cleaning of substrate surface 2. Surface modification treatment of substrate (O₂ or N₂)

    Thin Film Zone IA, West Area+86-21- 34206126-6010
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