Remove residual photoresist from incomplete development before evaporation or etching, so as to ensure the adhesion of evaporated metal layers and enable smoother etching processes. It can also modify the substrate before spin-coating to achieve more uniform photoresist coating.

Process / Testing Capabilities

Three power levels are optional, with the power ranges as follows:

● Low power level: 716 V DC voltage, 10 mA DC current, operating power of 7.16 W, compliant with requirements.

● Medium power level: 720 V DC voltage, 15 mA DC current, operating power of 10.15 W, compliant with requirements.

● High power level: 740 V DC voltage, 40 mA DC current, operating power of 29.6 W.

Technical Specifications

• Cleaning chamber dimensions: length 6.5 inches (165 mm), diameter 6 inches (152 mm), with an openable chamber cover.
• Suitable for surface treatment of 6-inch silicon wafers; the maximum residual photoresist removal rate is 4 nm/min.