XeF₂ Etching System

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XeF₂ Etcher

XeF₂ Etching System

Operating

Model：	Xactix® e1
Function：	XeF₂ (Xenon Difluoride) silicon etching is a dry etching technology based on gas-phase chemical reactions. It features mild etching conditions and excellent selectivity, with a high etching selectivity ratio against metals, silicon dioxide, and silicon nitride.
Engineer：	Mr.Zhang / +86-21- 34206126-6020 / dzlzhangyan@1
Location：	East Area, Thin Film IV Zone
Equipment ID：	EFM4XEF01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

It is mainly applied to the isotropic etching of silicon. The etching of silicon sacrificial layers can be efficiently realized through the following reaction formula.Si+2XeF2 →SiF4↑+2Xe↑.

Process / Testing Capabilities

1）Undercut fabrication: 2–20 μm, 20–100 μm, ＞1.3 mm；

2）Opening dimension: 0.25–10 μm;

3）Film release: Ultra-thin films with a thickness above 10 nm can be released under extreme process conditions.

Technical Specifications

Substrate size: 4 inches.High selectivity ratio over 1000:1 for shielding layers including silicon dioxide, silicon nitride, aluminum and aluminum oxide; the selectivity ratio to photoresist shielding layer is higher than 10:1.

XeF₂ is a strong oxidant that exists as a solid at room temperature and sublimates into a gaseous state upon heating. Its silicon etching reaction belongs to purely chemical etching without plasma assistance, which is mainly realized through the following chemical reaction: Si+2XeF2→SiF4↑+2Xe↑. Both etching products (SiF₄ and Xe) are gaseous and can be easily volatilized and exhausted.

The reaction proceeds as isotropic etching, with similar lateral and vertical etching rates, and the etched profile presents an arc or hemispherical shape.

Please provide the etching opening size, shielding layer material and substrate material.

As a toxic and hazardous substance, XeF₂ requires operators to be familiar with its gas properties.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

出现XeF2刻蚀硅刻不动的情况是什么原因造成的？

表面二氧化硅或光刻胶的阻挡造成无法刻蚀

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