High Aspect Ratio Dielectric Etching System

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Commissioning

Model：	NLD570
Function：	Dry etching system primarily used for high-aspect-ratio etching of quartz and lithium niobate (LiNbO₃) materials.
Engineer：	Mr. Liu / +86-21- 34206126-6013 / minliu@1
Location：	East Area, Thin Film IV Zone
Equipment ID：	EFM4HAD01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

This system is used for etching processes in optical device fabrication, including optical waveguides, amplifiers, optical switches, and micro-structured components such as concave/convex microlenses.

Process / Testing Capabilities

Quartz etching:

Aspect ratio up to 3:1 (at 30 μm feature size)

Selectivity to photoresist (PR): >1.5:1

Lithium niobate etching:

Aspect ratio >3:1 (at 1 μm linewidth)

Selectivity to Cr or Ni masks: >3:1

Technical Specifications

Supports wafers up to 8 inches; compatible with smaller samples and diced pieces Within-wafer uniformity: <5% Wafer-to-wafer uniformity: <5%

NLD (Neutral Loop Discharge) technology generates plasma by creating a high-frequency electromagnetic field within a vacuum chamber. Compared to conventional ICP systems, NLD allows better control over plasma diameter and density by adjusting the current.

This results in advantages such as high etch rate, high plasma density, excellent uniformity, and stable low-pressure discharge conditions.

Deep etching of quartz for optical device fabrication

Supports wafers up to 8 inches. Contaminated samples are not accepted. Process consultation is required prior to reservation.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

该设备接受什么掩膜材料？

可以使用各种掩膜，包括光刻胶（正胶、负胶包括SU8等）金属掩膜如Cr、Ni等。

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