NMC反应离子式深硅刻蚀系统(DRIE-II)
(NMC ICP Deep Silicon Etching System)
主要技术指标/Specifications:
- 气体种类:SF6、C4F8、Ar、O2
Gas: SF6、C4F8、Ar、O2
- 基片尺寸:最大支持8英寸,并向下兼容6、5、4、3、2英寸等以及破片
Substrate size: Up to 6inch, applicable to 5, 4, 3, 2inch and broken pieces
- 射频电源 ICP电源:13.56MHz,1200W; 偏压电源:13.56MHz,100W
RF Generators ICP source: 13.56MHz, 2500 W; RF Bias: 400kHz, 200 W
- 工艺温度:10℃到80℃可控
Process temperature: 10℃ to 80℃ controllable
- 传送模式:自动Loadlock传送系统
Wafer transfer: Automatic loadlock transfer system
主要用途/Applications:
硅材料的干法深刻蚀
Silicon deep etching with Bosch process.