维开多靶磁控溅射镀膜系统
(Vikaitech multi-target magnetron sputtering coating system)
主要用途/ Application:
常温、高温条件下均可沉积高质量、厚度精确可控制的金属单质及氧化物半导体、化合物等多种薄膜,例如Cr、Cu、Ni、Al、Ge、Ti、Pt、Ta、SiO2、MO、W、ITO、TiNx等金属单质、氧化物、氮化物薄膜,同时可满足在高深宽比硅孔内沉积金属种子层等
This device can deposit high-quality, precisely controllable thickness metal elements, oxide semiconductors, compounds, and other thin films at both room temperature and high temperature conditions, such as Cr Cu、Ni、Al、Ge、Ti、Pt、Ta、SiO2、MO、W、ITO、TiNx Thin films of metal elements, oxides, and nitrides, while also capable of depositing metal seed layers in silicon holes with high aspect ratios
设备工作原理简介/ Operating principle:
通过场致放电将氩气电离,利用磁场束缚带电粒子的运动,提高氩气的离化率。在再利用阴极电压,加速氩离子运动,让足够高能量的粒子(大于溅射阈值)轰击靶材表面,使其中的原子发射出来。
By ionizing argon gas through field induced discharge and utilizing a magnetic field to confine the movement of charged particles, the ionization rate of argon gas is improved. By reusing the cathode voltage and accelerating the movement of argon ions, high-energy particles (greater than the sputtering threshold) can bombard the surface of the target material, causing the atoms to be emitted.
工艺能力/ Capability:
1.支持8英寸以下的样品加工;厚度不要超过1cm
2.支持溅射沉积多种类金属薄膜;制备复合薄膜推荐合金靶材
3.支持反应溅射沉积多种氧化物、氮化物薄膜;变价化合物推荐自备化合物靶材
4.具备强磁靶,可以溅射磁性材料;自备靶材
5.可实现原位基片清洗、多层复合薄膜、多靶共溅复合薄膜沉积
6.工件台具备500℃以下加热功能 ,适合做原位加热制备半导体薄膜材料;衬底导热要好
1.Support sample processing for sizes below 8 inches; The thickness should not exceed 1cm
2.Support sputtering deposition of multiple types of metal thin films; Recommended alloy target materials for preparing composite films
3.Support reactive sputtering deposition of various oxide and nitride thin films; It is recommended to prepare compound target materials for variable valence compounds
4.Equipped with strong magnetic targets, capable of sputtering magnetic materials; Self provided target material
5.It can achieve in-situ substrate cleaning, multi-layer composite film deposition, and multi-target co sputtering composite film deposition
6.The workpiece table has a heating function below 500 ℃, suitable for in-situ heating preparation of semiconductor thin film materials; Good thermal conductivity of the substrate
典型使用案例/ Typical scenario:
材料合成
material synthesis
设备类别/Facilities:薄膜沉积设备/ Thin Film Deposition Equipment
设备编号/No.:EFM3MMS01
设备地点/Location:东区薄膜III区/ East Thin Film Area III
工艺工程师/Engineer in response:
姓名:付学成;邮箱:xuecheng.f@sjtu.edu.cn;电话:34206126-6010
Name: XueCheng Fu;Email:xuecheng.f@sjtu.edu.cn; Tel: 34206126-6010.
设备照片/Photos: