电感耦合等离子体化学气相沉积设备
(Inductively coupled plasma chemical vapor deposition equipment)
主要技术指标(Specifications):
① SiNx沉积工艺(100% SiH4, N2),
SiNx deposition process (100% SiH4, N2),
1.沉积速率:> 8nm/min(也可实现快速沉积)
Deposition Rate: > 8nm/min (Rapid Deposition can also be achieved at request, but may sacrifice quality)
2.折射率:~2.00 (1.85-2.1可控)
Refractive index: ~2.00 (1.85-2.1 controllable)
3.折射率均匀性:< ± 0.01
Uniformity of refractive index: < ± 0.01
4.片内不均匀性:< ± 3%
Intra-tablet heterogeneity: < ± 3%
5.重复性:< ± 3%
Repeatability: < ± 3%
6.应力:<100MPa
Stress: <100MPa @200nm thickness
7.湿法腐蚀速率(BHF 10:1 at 20 o C):<100nm/min
Wet etching rate (BHF 10:1 at 20 ℃): <100nm/min
② SiO2沉积工艺(100% SiH4, N2O)
SiO2 deposition process (100% SiH4, N2O)
1.沉积速率:> 8nm/min(也可实现快速沉积)
Deposition Rate: > 8nm/min (Rapid Deposition can also be achieved at request, but may sacrifice quality)
2.折射率:~1.46(可控)
Refractive index: ~1.46 (controllable)
3.折射率均匀性:< ± 0.01
Uniformity of refractive index: <+0.01
4.片内不均匀性:< ± 3%
Intra-tablet heterogeneity: < 3%
5.重复性:< ± 3%
Repeatability: <+3%
6.应力:<250MPa
Stress: <250MPa @ 200nm thickness
7.湿法腐蚀速率(BHF 10:1 at 20 o C):<160nm/min(<150度)
Wet etching rate (BHF 10:1 at 20℃): < 160 nm/min (< 150 degrees)
主要用途/Applications:
用于低温(不高于70℃)及高温(300度)沉积二氧化硅,氮化硅等介质薄膜。
Used for depositing silicon dioxide, silicon nitride and other dielectric films at temperatures lower than 70℃(recommended) and high temperature (up to 300℃).
加工能力:6 英寸及以下样片
Processing ability: 6 inch wafers or smaller samples