等离子去胶机
(Plasma Photoresist stripper)
主要技术指标:
- 起辉真空:1´10-2 Torr
Glow initial vacuum: 1´10-2 Torr
- 气体:O2
Gas: O2
- 起辉功率800W
Glow initial power: 800W
- 基片尺寸:≤4英寸
Substrate size: 4” and below
- 一次去胶2~10片
Capability of stripping 2~20 pieces sample at one time
主要用途/Applications:
用于光刻显影后对底膜的刻蚀及光刻胶的刻蚀
Stripping post etching or post development photoresist.