SVCS卧式低压化学气相沉积炉管
(SVCS Horizontal LPCVD Furnace)
主要技术指标/Specifications:
- 炉管1:N型多晶硅以及非晶硅薄膜沉积工艺 (LPCVD Poly)
气体:高纯N2、SiH4、PH3
Tube 1:n type doped poly and amorphous silicon film deposition process.
Process gas: PN2, SiH4, PH3
- 炉管2:低应力氮化硅,氮氧化硅薄膜(LPCVD Nitride)
气体:高纯N2、NH3、N2O、SiH2Cl2
Tube 2:low stress Si3N4 and SiON film
Process gas: PN2, NH3, N2O, SiH2Cl2
- 温度:700-900 °C
- Temperature 700-900 °C
- 硅片尺寸:3英寸、4英寸、6英寸圆片;50片/炉
Silicon wafer: 3”,4”,6” wafer;50wafers/batch
主要用途/Applications:
用于沉积高品质的n型掺杂或非掺杂的多晶硅或非晶硅;用于沉积高品质的低应力氮化硅或氮氧化硅。
Used in depositing n-type doping or p-type doping, undoped polysilicon and noncrystalline silicon, and used in depositing high-quality silicon nitride and silicon oxide with lower stresses.