紫外干涉薄膜厚度测量仪
(UV Interference Thin Film Thickness Measurement and Mapping System)
主要用途 /Application:
可对薄膜样品进行无接触的无损厚度测量,可测量薄膜厚度及光学常数,测量迅速、操作简单,精度通常可达到纳米或埃量级。波长范围可以从紫外到红外可选,样品台支持12寸及以下晶圆,包括不规则形状破片,可做自动面扫描。常用于测量二氧化硅,氮化硅,硅,光刻胶等多种材料的薄膜厚度。
It offers non-contact measurement of the thickness and optical constants of thin films. The measurement is fast and easy to operate, with accuracy of nanometer or angstroms. The wavelength ranges from UV to NIR. The sample holder supports wafers of 12 inches or below size, including irregular shaped fragments. The sample holder can perform automatic mapping. It is commonly used to measure the film thickness of silicon dioxide, silicon nitride, silicon, photoresist and other materials.
设备工作原理简介 /Operating principle:
在测量样品表面垂直照射紫外可见光,光的一部分在薄膜表面反射,另一部分透过薄膜后在薄膜与下层材料之间的界面反射。这时薄膜表面的反射光与薄膜底部的反射光产生干涉现象,使得反射光的强度发生振荡,光强振荡与入射光波长及薄膜的厚度相关。
When a UV-visible light irradiates on the sample surface vertically, part of the light reflects from the surface of the thin film, and the other part reflects at the interface between the thin film and the underlying material after passing through the film. At this time, the reflected light on the surface of the film interferes with the reflected light at the bottom of the film, which makes the intensity of the reflected light oscillate. The intensity oscillation is related to the wavelength of the incident light and the thickness of the measured film.
工艺能力 /capability:
- 薄膜厚度测试范围涵盖5 nm—250 μm;
- 膜厚测量准确度:≤±2%或1 nm (500 nm-800 nm厚度范围SiO2/Si标样);
- 膜厚测量精度(连续测量100次):≤02 nm (500 nm-800 nm厚度范围SiO2/Si标样);
- 膜厚测量稳定性(100次测量):≤05 nm (500 nm-800 nm厚度范围SiO2/Si标样);
- 测试速度:≤1 sec/点(5点及以上)。
- The film thickness measurement range covers 5 nm-250 μm;
- the film thickness measurement accuracy: ≤±2% or 1 nm (SiO2/Si standard sample in the thickness range of 500 nm-800 nm);
- Film thickness measurement accuracy (100 times of continuous measurement): ≤02 nm (SiO2/Si standard sample in the thickness range of 500 nm-800 nm);
- film thickness measurement stability (100 times of measurement): ≤05 nm (SiO2/Si standard sample in the thickness range of 500 nm-800 nm);
- measurement speed: ≤ 1 sec/point (5 points and above).
技术指标 /Specifications:
探测波长范围涵盖190nm—1700nm; 样品台支持12英寸,8英寸,6英寸,5英寸,4英寸样品,并且可以测试不规则样品。
The wavelength range covers 190 nm-1700 nm; The sample holder supports wafers of 12 inches, 8 inches, 6 inches, 5 inches, 4 inches size, including irregular shaped fragments.
典型使用案例 /Typical scenario:
厚度呈台阶分布的二氧化硅薄膜样品面扫描厚度分布的二维(上)和三维图(下)
2D and 3D thickness mapping result of SiO2 film with step thickness distribution.
设备类别 /Facilities: 测试设备 /Test Euipment
设备名称 /Name: 紫外干涉薄膜厚度测量仪 /UV Interference Thin Film Thickness Measurement and Mapping System
设备编号 /No.: WF1TFMF01
设备地点 /Location: 西区薄膜I区 /West Film Zone I
工艺工程师 /Engineer in response:
姓名:瞿敏妮;邮箱:minni.qu@sjtu.edu.cn;电话:021-34207734-8003
Name: Minni Qu;Email:minni.qu@sjtu.edu.cn; Tel: 021-34207734-8003
设备照片 /Photos: