Intlvac离子束溅射辅助沉积系统

（Intlvac ion beam assisted sputtering deposition System）

主要用途/ Application：

满足6英寸以下衬底在常温和加热两种条件下沉积高质量光学薄膜、介质薄膜，如SiO2、Al2O3、Ta2O5、MgF2等

This device is capable of depositing high-quality optical and dielectric films, such as SiO2, Al2O3, Ta2O5, MgF2, on substrates smaller than 6 inches at both room temperature and heating conditions

设备工作原理简介/ Operating principle：

离子束溅射(IBSD)，是一种薄膜沉积工艺，使用离子源，将靶材（金属或电介质）沉积或溅射到基片上，以形成金属或电介质膜。因为离子束是等能的（离子具有相等的能量），且高度准直，所以与其他PVD（物理气相沉积）技术相比，其能够精确地控制厚度，并沉积非常致密的高质量薄膜。

Ion beam sputtering (IBSD) is a thin film deposition process that uses an ion source to deposit or sputter a target material (metal or dielectric) onto a substrate to form a metal or dielectric film. Because ion beams are isoenergetic (ions have equal energy) and highly collimated, they can precisely control thickness and deposit very dense high-quality thin films compared to other PVD (Physical Vapor Deposition) techniques.

工艺能力/ Capability：

1.支持6英寸以下的样品加工；厚度不要超过2mm

2.支持反应溅射沉积多种氧化物、氮化物薄膜；

3.工件台具备300℃以下加热功能，适合做原位加热制备半导体薄膜材料；

4.膜厚的均匀性优于±3%

1.Support processing of samples under 6 inches; The thickness should not exceed 2mm

2.Support reactive sputtering deposition of various oxide and nitride thin films;

3.The workpiece table has a heating function below 300 ℃, suitable for in-situ heating preparation of semiconductor thin film materials;

4.The non-uniformity of film thickness is better than ± 3%

典型使用案例/ Typical scenario：

制备高致密、高均匀性光学薄膜Ta2O5

Preparation of high-density and highly uniform optical thin films Ta2O5

设备类别/Facilities：薄膜沉积设备/ Thin Film Deposition Equipment

设备编号/No.：EFM4IBS01

设备地点/Location：东区薄膜IV区/ East Thin Film Area IV

工艺工程师/Engineer in response:

姓名：付学成；邮箱：xuecheng.f@sjtu.edu.cn；电话：34206126-6010

Name: XueCheng Fu；Email：xuecheng.f@sjtu.edu.cn; Tel: 34206126-6010.