TSV电镀铜

（Electroplating system TSV-Cu）

主要用途/ Application：

硅通孔（through silicon via, TSV）是先进的3D封装的核心工艺。

TSV技术是指在芯片上打孔并在孔中填充互连材料，使芯片在垂直方向上直接与其他层相连的芯片互联技术。这种垂直互连减小互连长度，减少信号延迟，降低电容、电感，实现芯片间的低功耗、高速通讯，增加带宽和实现器件集成的超小型化。

深孔和深槽的电镀填充是TSV技术的核心。

 

Through silicon via (TSV) is the core process of advanced 3D packaging.

TSV technology refers to a chip interconnection technology in which holes are punched on the chip and interconnected materials are filled in the holes, so that the chip is directly connected to other layers in the vertical direction. This kind of vertical interconnection reduces interconnection length, reduces signal delay, reduces capacitance and inductance, realizes low power consumption and high-speed communication between chips, increases bandwidth and realizes ultra-miniaturization of device integration.

The electroplating filling of deep holes and deep grooves is the core of TSV technology.

 

设备工作原理简介/ Operating principle：

为满足在深孔或深槽中的铜电镀填充，需使用“自底向上”的电镀工艺。电镀时添加特殊电镀添加剂来抑制通孔外表面的沉积速率而加速通孔内部的沉积：

1)  强吸附力抑制剂，覆盖在铜表面的原子位置来抑制表面铜沉积；

2)  加速剂在通孔底部聚集来抵消抑制剂的作用而加速通孔底部铜的沉积速率；

3)  整平剂和/或增亮剂，抑制表面曲率分布引起的高电场区域的沉积，抑制凸出表面位置的快速成核；

图1.“自底向上”的电镀工艺原理示意。

Fig 1. Demonstration of the “bottom-up” electroplating process.

 

In order to satisfy the copper electroplating filling in deep holes or deep grooves, a “bottom-up” electroplating process is required. Special electroplating additives are added during electroplating to suppress the deposition rate on the outer surface of the through hole and accelerate the deposition inside the through hole:

1. Strong adsorption inhibitor, covering the atomic positions on the copper surface to inhibit copper deposition on the surface;
2. Accelerator accumulates at the bottom of the via to counteract the effect of the inhibitor and accelerate the copper deposition rate at the bottom of the via;
3. Levelers and/or brighteners, inhibit the deposition of high electric field areas caused by the surface curvature distribution, and inhibit the rapid nucleation of protruding surface positions;

 

工艺能力/ Capability：

如果用户能够保证种子层的连续性，可以填充孔径大于10微米，深度小于200微米，深宽比小于10的深孔或相当的深槽。

请于加工深孔或深槽之前与电镀工艺工程师进行确认。

If users can ensure the continuity of the seed layer, we can fill deep holes or equivalent deep grooves with an aperture greater than 10 microns, a depth less than 200 microns, and an aspect ratio less than 10;

Please confirm with the engineer before etching deep holes or deep grooves.

 

典型使用案例/ Typical scenario：

图2. 孔径30微米，孔深100微米的深孔电镀填充后的截面图

Fig 2. A cross-sectional view of a row of deep holes with a hole diameter of 30 microns and a hole depth of 100 microns after electroplating and filling.

 

设备类别/Facilities：电镀/电铸系统设备/ Electroplating/Electrocasting System

设备编号/No.：EPL0TSV01

设备地点/Location：东区电镀区/ East Plating Area

 

工艺工程师/Engineer in response:

姓名：田苗；邮箱：miaotian@sjtu.edu.cn 电话：021-34206126-6031

Name: Miao Tian; Email：miaotian@sjtu.edu.cn Tel: 021-34206126-6031.

 

设备照片/Photos：