VHF刻蚀系统

（VHF Etch System）

主要用途/ Application：

VHF刻蚀SiO₂能有效避免由于湿法刻蚀产生的Stiction，同时也避免了由于湿法刻蚀残留水份对Al/Al₂O₃/Au/Cu/的腐蚀。在MEMS工艺中牺牲层释放及Undercut的制作可以达到精准可控，搭配合理的设计可以有效有提高产品良率。

VHF etching of SiO₂ can effectively prevent the formation of Stiction caused by wet etching, and also avoid the corrosion of Al/Al₂O₃/Au/Cu caused by residual moisture from wet etching. The release of sacrificial layers and the fabrication of Undercut in MEMS technology can achieve precise controllability. If combined with reasonable design, VHF etching can effectively improve product reliability.

设备工作原理简介/ Operating principle：

SiO2+2HF2- +2(Acl)H+→SiF4+2H2O+2(Acl)

酒精作为催化剂不会消耗，而是与反应产物水结合，再次作为催化剂反应。为了消除Stiction，控制反应中水的含量就变得尤为重要。

SiO2+2HF2- +2(Acl)H+→SiF4+2H2O+2(Acl)

Alcohol as a catalyst is not consumed, but combines with the reaction product water and reacts again as a catalyst. In order to eliminate Stiction, it becomes particularly important to control the water content in the reaction.

工艺能力/ Capability：

Undercut:

常规尺寸: 2-20um

较长尺寸:20-200um

极限尺寸：>0.55mm

Opening：

常规尺寸：0.25-10um

特征穿透深度可以低至0.25um

Undercut：

Typical：2-20um

Long： 20-100um

Extreme：>0.55mm

Opening:

Normal: 0.25-10um

Feature penetration down to 0.25um

技术指标/ Specifications：

支持阳极（Si-Glass）键合、硅硅最大基片尺寸：8 inch

Max substrate size：8inch

典型使用案例/ Typical scenario:

Undercut的制作

一步刻蚀法
两步刻蚀法

详见工艺指导文件

Undercut

One-step etch
Two-step etch

Refer to the process guidance document for details

设备类别/Facilities：干法刻蚀设备/ Dry Etching Equipment

设备编号/No.：EFM3VHF01

设备地点/Location：东区薄膜 Ⅲ区/ East Thin Film III Area

工艺工程师/Engineer in response:

姓名：张琰；邮箱：dzlzhangyan@sjtu.edu.cn；电话：34206126-6020

Name: Yan Zhang；Email：dzlzhangyan@sjtu.edu.cn; Tel: 34206126-6020