Kzone标准湿法台

(Kzone Standard RCA Wet Benches)

主要技术指标及应用/Specifications:

1. 标准RCA清洗台

配备SC1，SC2，DHF,SPM,QDR等共8个槽体，具备控温精准，工艺完整等特点。有效去除表面颗粒、金属污染、有机污染以及硅片表面初氧层

Standard RCA cleaning benches with SC1，SC2，DHF, SPM tanks to effectively remove surface particles, metal/organic contaminations, and native silicon dioxide

2. 介质刻蚀湿法台

配置专门槽体用于刻蚀氧化硅、氮化硅等介质薄膜

Dielectric etching wet bench: equipped special chemical tanks to remove or etch dielectrics films , e.g., silicon oxide and nitride films.

3. 金属刻蚀湿法台

配置专门槽体用于刻蚀多种金属薄膜，如Ti, Al, Cr等

Metal etching wet benching: equiped special chemical tanks to remove or etch metal films, e.g., Ti, Al, Cr, etc.

4. 体硅刻蚀湿法台

用于MEMS或生物芯片体硅刻蚀操作

Bulk silicon etching wet bench: used for bulk silicon etching for MEMS or bio-chip application

5. 无机去胶台

Inoragnic photoresist stripping wet bench

6. 有机去胶台

Organic photoresist stripping wet bench

7. 基片尺寸： 6英寸向下兼容

Substrate size: 6” and below

主要用途/Applications:

由不同功能的湿法台组成，用于清洗基片及刻蚀去除金属、介质薄膜，或去除光刻胶。

Wildly used for substrate cleaning, metal/dielectric removal or etching, and photoresist stripping.