The DAD3650 equipment is applicable for dicing of semiconductor materials such as silicon wafers, SOI wafers, glass, quartz, sapphire, silicon carbide, ceramics and PCB substrates.

Process / Testing Capabilities

Suitable for dicing wafers with a size of 8 inches and below (including irregular-shaped wafers). The applicable wafer thickness ranges from 100 μm to 2500 μm. Processable wafer materials include silicon wafers, SOI, glass, quartz, sapphire, silicon carbide, ceramics, PCB circuits and other semiconductor materials.

Chipping for blank silicon wafer dicing: less than 10 μm; chipping for silicon oxide ceramic wafers and glass: less than 50 μm.

Technical Specifications

• Spindle rotational speed: 6000–60000 rpm
• Maximum rotatable angle of worktable: 320°
• Axis repeat positioning accuracy: 1 μm
• Z-axis step resolution: less than 0.5 μm
• Maximum dicing length in X direction: 260 mm
• Feeding speed range: 1~1000 mm/s