A wafer bonding equipment achieves high-precision wafer bonding through thermal, pressure and vacuum technologies.

Optical Alignment: The high-precision alignment system uses microscopes and alignment marks to register wafers, achieving sub-micron level accuracy.

Pressure Control: Uniform pressure is applied via pneumatic or mechanical loading to ensure intimate wafer contact and eliminate voids.

Thermal Treatment: The heating stage provides controllable temperature to activate bonding materials or promote chemical reaction curing.

Vacuum Environment: The vacuum chamber reduces bubble formation and optimizes the quality of the bonding interface.

Automated Process: It supports full-process automatic control of heating, pressurization and cooling to guarantee excellent repeatability and reliability.

The EVG510 is suitable for bonding of various materials such as silicon-to-silicon, silicon-to-glass and a wide range of metals, and is widely applied in MEMS device fabrication and wafer-level packaging.

Process / Testing Capabilities

• Supports multiple wafer bonding processes including anodic bonding, eutectic bonding, and thermocompression bonding;
• Eutectic bonding is applicable to but not limited to Au-Sn, Au-Si, Al-Al, Al-Ge, Cu-Cu, Cu-Sn, Au-In systems;
• Applicable wafer sizes: 6 inch, 4 inch, 3 inch.

Technical Specifications

• Supports multiple wafer bonding processes including anodic bonding, eutectic bonding, and thermocompression bonding;
• Eutectic bonding is applicable to but not limited to Au-Sn, Au-Si, Al-Al, Al-Ge, Cu-Cu, Cu-Sn, Au-In systems;
• Applicable wafer sizes: 6 inch, 4 inch, 3 inch.