Electroplating System Cu

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Copper Electroplating

Operating

Model：	µGALV
Function：	Copper Electroplating
Engineer：	Ms.Tian / +86-21- 34206126-6031 / miaotian@1
Location：	East Electroplating Area
Equipment ID：	EPL0CUP01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

This equipment is mainly used for copper electroplating. Copper electroplating features excellent electrical conductivity, stability and ductility with low porosity. It is widely applied in semiconductor interconnection processes. Meanwhile, as a commonly used pre-coating, it can effectively improve the adhesion of subsequent plating layers.

Process / Testing Capabilities

Capable of depositing metallic copper
For patterned samples, line width ≥ 5 μm
Plating thickness: 0.5–100 μm
Roughness and within-wafer uniformity vary by sample

Technical Specifications

Standard wafers in 3-inch, 4-inch and 6-inch sizes
Wafer thickness: 350 μm – 1000 μm
Special-shaped samples (including broken wafers) with dimensions below 150 mm

Copper electroplating is an electrochemical process for depositing a copper layer on the substrate surface. The plating solution is composed of copper sulfate, conductive salts, pH regulators and other components. During electroplating, the substrate serves as the cathode. When energized, copper ions are reduced and deposited on the cathode surface to form a copper coating.

Micro-bump Process:

Photoresist thickness of 20 μm, forming apertures of 40 μm;
Electroplate copper with a thickness of 10–15 μm, followed by electroplating tin of 5–10 μm.

Sample size shall be less than 6 inches. A copper (Cu) seed layer is required. Special-shaped samples will increase process duration; please communicate with the process engineer in advance.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

可以使用什么种子层

最好是300nm以上的铜。

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