This equipment is mainly used for tin-silver electroplating. Tin-silver electroplating features excellent electrical conductivity, solderability, corrosion resistance and ductility. Therefore, it is widely applied in the semiconductor industry. For instance, tin-silver electroplating can be used for wire bonding and solder ball connection in chip packaging. It can also serve as a conductive material for interconnection processes, as well as a corrosion-resistant coating for chip protection.

Process / Testing Capabilities

• Line width: 10 μm and above;
• Plating thickness: 1–20 μm;
• Compatible with 3-inch, 4-inch and 6-inch standard wafers;
• Wafer thickness: 350 μm–1000 μm; broken wafers are acceptable, sample size less than 150 mm.

Technical Specifications

• Standard wafer sizes: 3-inch, 4-inch and 6-inch;
• Adjustable plating rate;
• Pulsed voltage plating supported;
• Silver content: less than 1%;
• Current range: 0 ± 10 A, minimum starting current 5 mA, current accuracy 1 mA.