The system performs non-contact, non-destructive measurements on samples. It is capable of measuring thin film thickness with fast measurement speed, simple operation, and typical accuracy at the nanometer scale. The selectable wavelength range spans from ultraviolet to infrared, enabling measurement of ultra-thin films and multilayer film stacks, with a thickness range from a few nanometers up to hundreds of micrometers. The automated stage supports wafer-level thickness mapping across the surface.

For patterned wafers, a focused spot is required, combined with pattern recognition to achieve precise micro-area measurements at designated locations. On the AEMD platform, it is primarily used for thickness measurements of dielectric films, organic films, a-Si, and related materials. For patterned samples, automated micro-area measurement is realized through pattern recognition functionality.

Technical Specifications

Wavelength range: 190–1700 nm. Thickness measurement range: 4 nm to 115 µm. Accuracy: 0.2% or 1 nm (whichever is greater). Spot size: 17 µm (15× objective, 250 µm aperture). Stage diameter: 200 mm, with an XY translation stage. The software features pattern recognition, enabling rapid automated multi-point measurements on patterned wafers.