Chemically Assisted Ion Beam Etching System

Home > Facilities > Micro-/Nano Fabrication > Dry Etching > Chemical Assisted Ion Beam Etching System (CAIBE)

Equipment Information Guidelines for Contract Processing Inquiry

Chemical Assisted Ion Beam Etching System (CAIBE)

Commissioning

Model：	Mill 200
Function：	Perform high-anisotropy dry etching on metals, semiconductors, oxides, polymers and other materials.
Engineer：	Mr.Fu / +86-21- 34206126-6010 / xuecheng.f@1
Location：	East Area, Thin Film IV Zone
Equipment ID：	EFM4CRB01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

It can etch various metallic and dielectric materials such as Cu, Ti, Cr, SiO₂, Si, and LiNbO₃, and is also applicable to devices with micro-nano structures including inclined sawtooth gratings.

Process / Testing Capabilities

Equipped with conventional gases such as nitrogen, oxygen and argon, as well as a total of 12 channels of fluorine-based and chlorine-based gases.
The tilt angle of the workpiece stage is adjustable from 0° to 170°.
The backside helium cooling temperature ranges from 0 to 80 °C, suitable for etching with photoresist.
Equipped with an endpoint detection function.

Technical Specifications

Capable of etching 8-inch, 6-inch, 4-inch and 3-inch wafers.
Silicon dioxide etching rate: greater than 20 nm/min.
Copper etching rate: greater than 15 nm/min.

After the sample is transferred into the process chamber, the workpiece stage is adjusted to a proper angle, and the backside helium cooling temperature is set. Then, a mixed gas of argon and reactive gas is introduced into the reaction chamber for discharge and ionization. The screen grid filters out ions with uniform energy, which are accelerated by the acceleration grid and then bombard the surface of the sample to be etched. The optical emission spectroscopy (OES) endpoint detection system monitors the etching completion by analyzing changes in the spectrum.

With the workpiece stage tilted at 135° and the combined energy of the screen grid and acceleration grid set to 1100 eV, inclined sawtooth gratings are fabricated by etching. The grating period is approximately 600 nm with a depth of 1 μm.

1. Flexible substrates are not allowed for samples, to prevent thermal shrinkage and deformation during etching.

2. Samples shall be resistant to cracking under heating. Thermally fragile and poor heat conduction samples are not acceptable.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

该设备和反应离子刻蚀（sentech）有何区别

1.该设备工件台可以倾斜，当反应的生成物无法抽走，如铌酸锂，在刻蚀时可以掉落，不会附着在衬底上，影响刻蚀形貌.

2.该设备的离子束平行好，能量更高，在面对RIE刻蚀困难的材料面前更有优势.

3.该设备有OES，面对刻蚀多层膜，更专业
02

该设备和普通离子束刻蚀（Advance）有何区别

1.该设备的栅网达到360mm，可以满足8英寸样品刻蚀

2.该设备的离子束能量更均匀，离子束更平行.

3.该设备离子束能量调节范围大，可以减少刻蚀刻蚀损伤.

4该设备具备反应气体，可以刻蚀得更快。

Message Inquiry

If your question is not listed above, please email us at aemd@sjtu.edu.cn or click the button below to submit an inquiry.

Email Inquiry

Note: "@1" represents "@sjtu.edu.cn"