CMOS-grade Dielectric Etch Cleaning Station

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Operating

Model：	Custom
Function：	Used for dielectric wet etching and cleaning of 6–8 inch and 3–4 inch wafers. Each tank can process up to 5 wafers simultaneously. Supports dielectric etching and cleaning using phosphoric acid, SPM, and DHF solutions.
Engineer：	Mr. Li / +86-21- 34206126-6015 / lijinxi@1
Location：	East Area, Inorganic Wet Process III Zone (Strict Metal Control)
Equipment ID：	EIM3CDE01

Reservation

Basic Equipment Information
Operating Principle

Main Application

This system is designed for dielectric wet etching and cleaning of wafers sized 6–8 inches and 3–4 inches. It is equipped with two sets of tanks of different sizes, each capable of processing up to 5 wafers per batch. Chemical solutions such as phosphoric acid, SPM (sulfuric peroxide mixture), and DHF (diluted hydrofluoric acid) are used for dielectric etching and cleaning processes.

Process / Testing Capabilities

Processes up to 5 wafers (≤8 inches) per batch. Phosphoric acid and SPM tanks are equipped with heating functions, with adjustable temperature settings. Suitable for removing dielectric materials such as silicon nitride (Si₃N₄) and silicon dioxide (SiO₂)

Technical Specifications

Dimensions: approximately 1800 (L) × 1200 (W) × 2000 (H) mm
Working surface: 1600 × 900 mm; constructed with 12 mm PP (polypropylene) white panel
Tank size: 225 (L) × 100 (W) × 250 (H) mm

The system utilizes heated chemical baths and ultrasonic assistance to control reagent temperature and enable effective dielectric etching and cleaning processes.

This equipment should be reserved when organic cleaning or stripping tanks are required.

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FAQs

01

用户可以独立操作吗？

设备操作须由工艺老师操作

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