Principle: Convert the elements to be implanted (e.g., B, P, As, Ar, etc.) into an ionic state through an ionization process.

Methods: Thermal Ionization: Heat the solid material to cause its evaporation, followed by ionization via electron bombardment.

Gas Ionization: Perform electron bombardment on gaseous substances (e.g., BF₃, PH₃) to ionize gas molecules into corresponding ions (e.g., BF₂⁺, P⁺).

Principle: The ions generated by the ion source are extracted and imparted with a specific kinetic energy by means of electric field acceleration.

Principle: The target ions are screened out by utilizing the principle of magnetic field deflection (e.g., to exclude impurity ions or different isotopes of the same element).

Principle: The shape, direction and position of the ion beam are controlled by electromagnetic lenses and scanning systems to ensure its uniform coverage of the entire wafer surface.

Principle: The ion beam, after filtration and scanning, ultimately bombards the wafer surface, and the ions penetrate into the wafer interior through kinetic energy deposition to form a doped layer.

1. Core Doping for PMOS Source/Drain (P⁺ Region) in CMOS Logic Chips: Low-energy ion implantation (e.g., 5~20 keV) forms shallow junctions (<10 nm), used in advanced processes below 7 nm to suppress the short-channel effect.
2. P-well Formation: High-energy implantation (100~500 keV) creates deep P-wells (junction depth 1~3 μm) in silicon substrates to isolate NMOS devices, with a doping dose of approximately 1e13~1e14 ions/cm².
3. Threshold Voltage Regulation for NAND Flash Floating Gate Cells in Memory Chips: Boron implantation is used to adjust the threshold voltage distribution of memory cells.
4. DRAM Channel Doping: Light boron doping (dose ~1e12 ions/cm²) modulates the MOSFET threshold voltage and reduces standby leakage current.

Phosphorus (P) - Donor Impurity (N-type)

1. NMOS Source/Drain (N⁺ Region): Medium-energy implantation (20~50 keV) forms conductive channels with a doping concentration up to 1e20 cm⁻³, which requires rapid thermal annealing for activation.
2. Source of Power MOSFETs: High-energy implantation (>100 keV) forms low-resistance N⁺ sources in Si or SiC substrates to reduce on-resistance.
3. Buried Word Line (WL) in DRAM: Phosphorus diffusion forms N-type buried layers to improve word line conductivity, suitable for high-capacity memory chips (e.g., 14 nm DDR5).
4. Emitter of Bipolar Junction Transistors (BJTs): Phosphorus diffusion forms N⁺ emitters, which form PN junctions with the base region (boron-doped) and are used in radio frequency (RF) amplification or power switch devices.

Arsenic (As) - Donor Impurity (N-type)

1. NMOS Source/Drain Extension (SDE) in Advanced Processes: Low-energy implantation (<10 keV) forms ultra-shallow junctions (junction depth <5 nm), used in FinFET/GAA devices below 3 nm to suppress source-drain punch-through.
2. Buried Layer Doping for High-Speed Logic Chips: Arsenic implantation in silicon substrates forms deep N-type layers (e.g., beneath the buried oxide layer of SOI substrates), used for isolation or conductive layers in RF devices.
3. Source/Drain of InGaAs Devices: Arsenic implantation in InGaAs substrates forms N⁺ contacts, which utilize its lattice matching with III-V materials to reduce contact resistance (e.g., 5G millimeter-wave chips).

Fluorine (F) - Interface Modulation

1. FinFET/GAA Gate Engineering: Fluoride ion implantation (energy ~1 keV, dose ~1e14 ions/cm²) beneath metal gates neutralizes interface trap charges and optimizes threshold voltage uniformity (e.g., Intel's 10 nm process).
2. In addition, BF₂ implantation can be used to achieve ultra-shallow junction implantation of B.