| Model: | D8 Discover |
|---|---|
| Function: | It is used to characterize the epitaxial structure, film thickness, crystallinity, crystal orientation, and interfacial relaxation of single-crystal thin films on 4-inch semiconductor wafers. |
| Engineer: | Teacher Shen / +86-21- 34207734-8010 / shenyunliang@1 |
| Location: | East Area,Testing Zone IV |
| Equipment ID: | ETE4HRX01 |
X-ray diffraction(XRD) is used for phase identification, crystal structure analysis, residual stress measurement, crystallinity evaluation, texture characterization, and nanomaterial research. It is widely applied in materials science, chemistry, geology, and related fields.
Process/Testing Capabilities
XRD is a multifunctional, high-precision X-ray diffraction analysis system integrated with advanced capabilities such as micro-area analysis and 2D detection. The system is equipped with a high-resolution goniometer, a micro-focus X-ray optical system, and a high-speed two-dimensional detector, enabling micro-area diffraction, high-resolution XRD (HRXRD), and grazing-incidence thin film analysis.
Its key advantage lies in the ability to perform crystallographic analysis on microscopic regions of a sample (e.g., individual grains or defects), providing comprehensive crystallographic solutions for research in semiconductors, new energy materials, nanomaterials, and geological samples.
Technical Specifications
For polycrystalline samples, the diffraction pattern consists of a series of characteristic peaks, and phase identification can be achieved by comparison with standard reference databases. For single-crystal analysis, atomic positions can be resolved. The atomic-scale structural sensitivity of XRD makes it a fundamental and essential technique for materials characterization.
For high-resolution measurements, the crystallographic plane to be analyzed must be specified (including Miller indices, 2θ angle, etc.).
For X-ray reflectivity (XRR) samples: the surface roughness is typically less than 5nm, and complete information of all sample layers must be provided for measurement.
可能原因:X光管老化、光路准直偏移、样品未对准或探测器故障。 解决建议:检查X光管寿命(建议>20,000小时),重新校准光路(使用标准样品如Si或LaB6),确保样品居中,必要时联系工程师检测探测器性能。