It is primarily used for ultra-high-resolution microscopic morphology observation of micro- and nano-scale materials and structures. It can also be combined with an energy-dispersive X-ray spectroscopy (EDS) system to perform micro-area compositional analysis on material or structural surfaces and cross-sections.

Process/Testing Capabilities

Field emission scanning electron microscopy (FE-SEM) is widely used in the inspection of semiconductors, inorganic non-metallic materials, and devices due to its high resolution, large depth of field, enhanced stereoscopic imaging, and wide adjustable magnification range.

It enables secondary electron imaging and backscattered electron imaging of surface morphology for various solid samples, as well as image processing. When combined with an energy-dispersive X-ray spectroscopy (EDS) system, it can perform qualitative, semi-quantitative, and quantitative elemental analysis at micro-regions (point, line, and area) on the sample surface. It provides integrated analytical capabilities for both morphology and chemical composition.

Technical Specifications

1.Resolution: ≤0.7nm@15V; ≤1.2nm@1kV

2.Accelerating voltage: 0.02–30kV; excellent low-voltage performance suitable for observing low-conductivity samples

3.Detectors: secondary electron detectors (one in-lens secondary electron detector and one chamber secondary electron detector), backscattered electron detector, and infrared detector, enabling simultaneous acquisition of secondary electron and backscattered electron images

4.Sample stage: maximum directly loadable sample size Φ200 mm

5.Five-axis motorized eucentric stage, tilt range -3° to 70°, continuous 360° rotation

6.Equipped with an EDS system for micro-area compositional analysis

7.Ion sputter coater for gold (Au) coating deposition