| Model： | SI 500D |
|---|---|
| Function： | It is used for low-temperature (130 ℃) deposition of thin films such as SiO₂ and SiNₓ, as well as TEOS-based films. It can also deposit doped film materials including PSG, BSG and BPSG. |
| Engineer： | Mr. Liu / +86-21- 34206126-6013 / minliu@1 |
| Location： | Thin Film Zone IV, East Area |
| Equipment ID： | EFM4ICP01 |
ICPCVD stands for Inductively Coupled Plasma Chemical Vapor Deposition. This technology adopts high-density plasma to deposit high-quality dielectric thin films at low temperatures, and is widely applied in the fabrication of semiconductors and optoelectronic devices.
Process/Testing Capability
It can deposit thin films such as SiO₂, Si₃N₄ and TEOS with standard refractive indices, as well as various doped SiO₂ thin films doped with elements like phosphorus (P) and boron (B).
Technical Specifications
The equipment supports 8-inch wafer processing and is also compatible with small-sized wafers and diced fragments of 6-inch, 5-inch, 4-inch, 3-inch and other specifications. For 8-inch wafers, the film uniformity is less than 3% for SiO₂ and less than 5% for SiNₓ.
In ICPCVD, the inductively coupled coil plays a vital role in creating a high-density plasma environment. Generally mounted around the reaction chamber, the coil generates a strong electromagnetic field to ionize the process gases. The resulting high-density plasma not only accelerates the chemical reactions required for thin film formation, but also distributes energy uniformly across the substrate surface. Such uniformity is critical to achieving consistent film properties including thickness, density and adhesion over the entire substrate.
可以，设备为ICPCVD，可以低温沉积。
Address: 800 Dongchuan Road, Minhang District, Shanghai 200240, China
Tel: +86 21 3420 7734
Email: aemd@sjtu.edu.cn
