| Model: | C200 |
|---|---|
| Function: | 1. Etching of metal films such as Al, Mo, Cr and Ti; 2. Etching of organic thin films; 3. Etching of other thin film materials. |
| Engineer: | Mr. Liu / +86-21- 34206126-6013 / minliu@1 |
| Location: | East Area, Thin Film IV Zone |
| Equipment ID: | EFM4RIM01 |
This equipment is mainly used for micro-nano structure etching of metals, metal oxide thin films and various organic materials.
Process / Testing Capabilities
It supports anisotropic etching of metals such as Al, Cr and Mo. Featuring a high etching rate and equipped with an endpoint detection system, the equipment enables automatic process termination.
Technical Specifications
The equipment is designed for 8-inch wafers and is backward compatible with 6-inch, 5-inch, 4-inch, 3-inch substrates, as well as etching for various fragmented samples. It is equipped with process gases including Cl2, BCl3, HBr, SF6, CF4, CHF3, Ar, N2 and O2.
First, the ICP-RIE system introduces designated etching gases. Radio frequency power (typically 13.56 MHz) is applied to a conductive coil, which is generally mounted on the top of the plasma reaction chamber and isolated from the chamber internal gas atmosphere. When RF power passes through the coil, an oscillating electromagnetic field is generated around the conductor. The energy of this oscillating electromagnetic field is transmitted to the gas inside the reaction chamber via inductive coupling, exciting electrons in gas molecules and stripping them from atoms to produce free electrons and positive ions. These free electrons continuously gain energy in the electromagnetic field and collide with additional gas molecules, triggering further electron dissociation and ultimately forming high-density plasma.

该设备可接受的掩膜材料有普通光刻胶,SiO2或SiNx,a-Si等各种硬掩模材料。