Compound Semiconductor Etcher

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Commissioning

Model：	SI 500
Function：	This equipment is used for the etching of compound semiconductor materials, including GaAs-based, InP-based and GaN-based materials.
Engineer：	Mr. Liu / +86-21- 34206126-6013 / minliu@1
Location：	East District Compound Semiconductor Area
Equipment ID：	ECS0CSE01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

It is mainly used for etching various compound semiconductor materials, and is widely applied to the manufacturing and processing of communication, optical communication, radio frequency devices and other components.

Process / Testing Capabilities

It supports a maximum 8-inch substrate and is backward compatible with various small-size wafers and fragmented samples.

Technical Specifications

Etching rate of GaAs-based materials＞400 nm/min with verticality of 88–92°；Controllable etching rate for GaN ranging from 1–5 nm/min；Etching rate of InP＞300 nm/min with verticality of 88–92°.

ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) is an advanced technology that combines inductively coupled plasma (ICP) and reactive ion etching (RIE). It is designed to achieve high etching rates, excellent selectivity and low-damage etching. Since plasma can be maintained under low-pressure conditions, it also enables superior profile control.First, the ICP-RIE system introduces specific etching process gases. Radio frequency power (typically 13.56 MHz) is applied to a conductive coil installed on the top of the plasma reaction chamber, which is isolated from the internal chamber atmosphere. When RF power is supplied to the coil, an oscillating electromagnetic field is generated around the conductor. The energy of this oscillating electromagnetic field is transmitted to the gas inside the chamber via inductive coupling. This excites electrons within gas molecules and strips them from atoms, producing free electrons and positive ions. These free electrons continuously absorb energy from the electromagnetic field and collide with additional gas molecules, triggering further ionization and ultimately forming high-density plasma.

AlGaAs / GaAs quantum dots

Samples larger than 8 inches and contaminated samples are not acceptable.

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FAQs

01

该设备接受什么掩膜材料？

可以使用光刻胶（正胶和负胶）、二氧化硅、金属等各种掩膜。

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