Deposits high‑quality thin films with precisely tunable thickness, covering elemental metals, oxide semiconductors, and compound materials.Available materials include elemental metals, oxides and nitrides such as Cr, Cu, Ni, Al, Ge, Ti, Pt, Ta, SiO2, Mo, W, ITO, and TiNx.

Process/Testing Capability

1. Supports processing of samples smaller than 8 inches with a maximum thickness of 1 cm.
2. Enables reactive sputtering deposition of various oxide and nitride thin films.
3. Equipped with strong magnetic targets for sputtering magnetic materials.
4. Capable of in-situ substrate cleaning, deposition of multi-layer composite films, and co-sputtering composite films with multiple targets.
5. The sample stage supports heating up to 500 °C, suitable for in-situ heated fabrication of semiconductor thin film materials.

Technical Specifications

1. Non-uniformity: ±5% on 8-inch substrates
2. Sputtering metal gap-fill capability with an aspect ratio of approximately 5:1
3. Supports sample processing for sizes below 8 inches; maximum sample thickness: 2 mm