Deposit high-quality optical and dielectric thin films at both room temperature and elevated temperature, including SiO2 , Al2O3 , Ta2O5 , MgF2 and other materials.

Process/Testing Capability

1. Supports reactive sputtering to deposit a variety of oxide and nitride thin films;
2. The substrate stage is heating-enabled with a temperature below 300 °C, suitable for preparing semiconductor thin films by in-situ heating;
3. The angle of the substrate stage is adjustable from 0° to 160°, which meets the hole-filling requirements;
4. Equipped with four targets to realize multilayer film deposition.

Technical Specifications

1. The film thickness uniformity of deposited silicon dioxide is better than ±3% on 6-inch substrates.
2. The film thickness uniformity of deposited aluminum oxide is better than ±2% on 6-inch substrates.
3. Sample processing for sizes under 6 inches is supported, with a sample thickness limited to no more than 2 mm.