● Sputtering deposition of various metal, oxide and nitride thin films;

● Capable of fabricating functional thin film materials via reactive sputtering;

● Enables in-situ substrate cleaning and multi-target co-sputtering deposition of composite thin films.

Process/Testing Capability

Capable of sputtering a variety of metal, semiconductor and ceramic thin films with controllable thickness, including Cr, Cu, Ag, Al, Ti, Mo, ITO, AZO, TiNx, etc.

The maximum deposition thickness is generally no more than 3 μm. The resistivity of deposited metal thin films can be adjusted on demand.

Technical Specifications

• Supports thin film deposition on substrates smaller than 6 inches.
• The deposited film thickness typically ranges from 2 nm to 2 μm.
• Refractive index of silica: approximately 1.47.
• Refractive index of TiO₂: approximately 2.40.
• For 6-inch substrates: film thickness error ±3%, uniformity ±3%, repeatability fluctuation ±2%.