This equipment is a semi-automated wafer surface defect inspection and analysis system designed for the semiconductor and compound semiconductor industries.

It scans the entire surface of the sample using a laser beam. Based on signals collected by detectors in four channels—scattered light, reflected light, phase shift, and Z channel—it rapidly classifies defects (including particles, scratches, pits, watermarks, and residue marks), counts each defect type, and measures the corresponding defect sizes. Finally, it generates a full-surface defect distribution map and a comprehensive inspection report.

Process/Testing Capabilities

It is used to monitor and analyze various defects across different process steps, investigate their root causes, and develop methods for eliminating or preventing defect formation. It can effectively improve device yield affected by surface defects in a targeted manner. The system also provides important support for process optimization, environmental improvement, device quality monitoring, yield enhancement, and improved manufacturing efficiency.

Technical Specifications

● 405 nm wavelength laser, spot diameter ≤ 15 µm

● Maximum sample size: 8-inch wafer

● Defect sensitivity (minimum detectable size):

Particles: diameter ≥ 83 nm (PSL on Si)

Scratches: length ≥ 100 µm, width ≥ 0.1 µm, depth ≥ 5 nm

Pits: diameter ≥ 20 µm, depth ≥ 5 nm

Contamination (liquid residue): diameter ≥ 20 µm, thickness ≥ 1 nm