Contact Mask Aligner with Deep /Near UV Exposure System

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Single-sided alignment contact ultraviolet lithography machine

Operating

Model：	ABM/6/500/DUV/DCCD/M
Function：	1.Substrate: 6-inch and smaller silicon wafers, glass, etc.; 2.Lithography of micro-nano structures and device patterns with a minimum line width of 1 μm; 3.Single-sided alignment lithography.
Engineer：	Zhang / +86-21-34206126-6029 / captianzhangdi@1
Location：	West Area,Lithography Zone I
Equipment ID：	EODAMAL01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Application

Including wafer lithography patterning, overlay alignment, thin film pattern fabrication, etc., supporting R&D and production in fields such as MEMS, semiconductors and optoelectronics.

Process/Testing Capabilities

Exposure of micron-scale structural patterns in micro-nano device processing, resolution: 0.8 μm
Front-side alignment accuracy: ±0.5 μm
Back-side alignment accuracy: ±1 μm, supporting 6-inch, 4-inch and fragmented wafers below 6 inches

Technical Specification

Resolution: 0.8μm
Front registration accuracy: ±0.5μm
Back registration accuracy: ±1μm, supporting 6-inch, 4-inch and fragments below 6 inches

Its working principle is to control the light intensity and time to expose the pattern on the photomask onto the spin-coated photosensitive material, and then realize the transfer of the pattern to the substrate after development.

Minimum feature size: 1 μm

Semiconductor standard silicon wafers or glass wafers.
Sample size: 2", 3", 4".
Mask size: 5", 7"

For samples ≤ 6", dry solids, preheat for 10 minutes after turning on the light box power supply, and preheat for 10 minutes after turning on the mercury lamp. Please keep the machine clean and tidy after use.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

The mercury lamp fails to ignite properly.

The mercury lamp needs to be replaced.

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