Measuring microscope

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Measuring Microscope

Operating

Model：	STM7
Function：	It is mainly applied to the structural observation and dimension measurement of micro-nano fabrication samples.
Engineer：	Shen / +86-21- 34207734-8010 / shenyunliang@1
Location：	West Thin Film Area IA
Equipment ID：	WF1STMO01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Applications

It is mainly used for structural observation and measurement of micro-nano processed samples, and is also applicable to the measurement of large samples beyond the field of view.

Process/Testing Capabilities

For standard samples, the planar measurement accuracy ≤ 3 μm + 2%×L, where L is the measured length. Acceptance criteria:L = 100 mm, measured result L = 99.9988 mm;L = 1 mm, measured result L = 0.9991 mm.
For standard samples, the Z-axis measurement accuracy ≤ 5 μm + 3%×L, where L is the measured length.Acceptance criteria:L = 1.38 mm, measured result L = 1.3806 mm.
For deep silicon etching trench samples with an opening width of 40 μm and a depth over 120 μm (aspect ratio > 3), the depth measurement error ≤ 5 μm.Acceptance standard: H = 131.7 nm (by SEM); measured result H = 0.1297 mm.

Technical Specifications

For standard samples, the planar measurement accuracy is ≤ 3 μm + 2%×L, where L denotes the measured length.Acceptance reference:At nominal L = 100 mm, measured value = 99.9988 mm;At nominal L = 1 mm, measured value = 0.9991 mm.
For standard samples, the Z-axis measurement accuracy is ≤ 5 μm + 3%×L, where L denotes the measured length.Acceptance reference:At nominal L = 1.38 mm, measured value = 1.3806 mm.
For deep silicon etching trench samples with an opening width of 40 μm and a depth greater than 120 μm (aspect ratio > 3), the depth measurement error shall be ≤ 5 μm.Acceptance reference: Standard depth H = 131.7 nm (measured by SEM); instrument measured result H = 0.1297 mm.

The measuring microscope adopts an autofocus system based on active reflection and confocal methods.

1. For deep silicon etching trench samples with an opening width of 40 μm and a depth exceeding 120 μm (aspect ratio > 3), the depth measurement error shall be ≤ 5 μm; Acceptance standard: H = 131.7 nm (tested by SEM), measured result: H = 0.1297 mm.

2. For standard samples, the Z-axis measurement accuracy ≤ 5 μm + 3%×L, where L is the measured length;
Acceptance standard: L=1.38 mm, measured result: L=1.3805 mm.

3. For standard samples, the planar measurement accuracy is ≤ 3 μm + 2%×L, where L is the measured length; Acceptance criteria: Nominal L = 100 mm and L = 1 mm; the measured results are L = 99.9988 mm and L = 0.9991 mm respectively.

It is mainly used for structural observation and measurement of micro-nano processed samples.

1. Sample size less than 6 inches. Keep the back of the sample clean. Please turn the brightness to the minimum after use.
2. Close the software after operation.
3. Do not touch the equipment or the operating computer while the device is running, to avoid accidental contact causing equipment shutdown or malfunction.
In case of any equipment alarm, please notify the corresponding equipment engineer.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

Can the structural dimensions within a 6-inch wafer that are not in the same field of view be measured?

The measuring microscope is capable of measuring large sample dimensions beyond the field of view.

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