Parylene Deposition System
Parylene Deposition System
Operating
Model: PDS-2010
Function: Deposition of Parylene C, D, N, and F materials.
Engineer: Fu / +86-21- 34206126-6010 / xuecheng.f@1
Location: East Area, Thin Film IV Zone
Equipment ID: EW1PDSS01
  • Basic Equipment Information
  • Operating Principle
  • Typical Application Case
Main Application

This system is used for the deposition of poly-para-xylylene (Parylene) thin films, including types C, D, N, and F. The achievable film thickness ranges from 500 nm to 50 μm.

Process / Testing Capabilities

  • Maximum substrate size: up to 6 inches
  • Thickness non-uniformity: approximately ±5%
  • Deposition rate: ~5–10 μm/h
  • Minimum thickness: ≥500 nm
  • Maximum thickness: ≤50 μm

Technical Specifications

Parylene N: Low dissipation factor, suitable for high-frequency RF applications (dielectric loss ~0.0006 at 1 MHz)

Parylene C: Contains a chlorine atom on the benzene ring, resulting in extremely low permeability to moisture and corrosive gases (resistivity: 6–8 × 10¹⁶ Ω·cm at 25°C, 50% RH)

Parylene F: Suitable for high-temperature and UV-resistant applications

Sublimation: Parylene dimer is heated to ~175°C in the vaporization chamber and sublimates into gas

Pyrolysis: The gaseous dimer enters a pyrolysis chamber (~680°C), where it is cracked into reactive monomers

Deposition: The monomers enter a room-temperature vacuum deposition chamber and polymerize on the substrate surface, forming a uniform, dense, and pinhole-free thin film

Deposition of a ~4 μm Parylene C coating on fabricated chip samples to provide moisture barrier protection and extend device lifetime.
Suitable for clean silicon, quartz, and glass substrates up to 6 inches. Small fragments must be mounted onto a larger wafer for processing.
Involves chemicals and high temperatures; users must be trained and follow standard operating procedures.
The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.
FAQs
  • 01
    设备操作最要注意什么?

    冷凝头没有升温到20摄氏度,禁止破腔!!

  • 02
    能否沉积低于100nm的薄膜?

    理论上是可以的,但均匀性要变差一些。

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