Radio frequency is used to ionize gases containing thin-film constituent atoms to locally generate plasma, which promotes a series of gas-phase chemical reactions and forms solid thin films on the sample surface. It is mainly applied to the low-temperature growth of films such as SiOx, SiNx and a-Si.

Process/Testing Capability

• High and low rate deposition of silicon dioxide is achievable, with a deposition rate up to 250 nm/min.
• High-stress and low-stress deposition of silicon nitride, with internal stress less than 50 MPa.
• Film thickness non-uniformity is less than 3%.

Technical Specifications

• The maximum operating temperature of the equipment is 350℃.
• The maximum sample size is 6 inches, backward compatible with 5-inch, 4-inch, 3-inch and other sizes, as well as various diced fragments.
• Available process gases include SiH₄, NH₃, N₂O, CH₄, Ar, N₂, CF₄, H₂, etc.