Horizontal LPCVD Furnace

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LPCVD (Amorphous / Polycrystalline Silicon Deposition)

Operating

Model：	LH2
Function：	1.High-quality polysilicon deposition at approximately 630°C (process gas: silane). 2.High-quality amorphous silicon deposition at approximately 540°C.
Engineer：	Li / +86-21- 34206126-6015 / lijinxi@1
Location：	West Area, High-Temperature Furnace Zone
Equipment ID：	WDFSLPF01

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Applications

This system is used for depositing polysilicon or amorphous silicon thin films via Low-Pressure Chemical Vapor Deposition (LPCVD). The deposited films exhibit high quality and are critical in micro/nano fabrication, especially in silicon-based CMOS processes.

Process / Testing Capabilities

Deposition of polysilicon and amorphous silicon thin films using LPCVD. Typical process temperature: around 600°C. Film thickness range: approximately 30 nm to 400 nm. Film uniformity: within 3%

Technical Specifications

Suitable for wafers up to 6 inches. LPCVD-based thin film deposition for both polysilicon and amorphous silicon

Using LPCVD, silane (SiH₄) decomposes at elevated temperatures to form silicon thin films, which are deposited onto silicon substrates.

Polysilicon thin film deposition in CMOS fabrication processes

Only 3”–6”silicon wafers (round wafers) are allowed. Post-processed wafers are strictly prohibited

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.

FAQs

01

工艺温度大概多少？

600度左右。

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