Horizontal Oxidation / Diffusion Furnace

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Oxidation Furnace (Dry / Wet Oxidation)

Operating

Model：	AH3
Function：	1.High-quality dry oxidation of silicon dioxide (SiO₂). 2.Wet oxidation for ultra-thick silicon dioxide films. 3.Thermal annealing processes below 1100°C.
Engineer：	Li / +86-21- 34206126-6015 / lijinxi@1
Location：	West Area, High-Temperature Furnace Zone
Equipment ID：	WDFSOXD03

Reservation

Basic Equipment Information
Operating Principle
Typical Application Case

Main Applications

High-quality dry oxidation of silicon dioxide (SiO₂), typically for films below 300 nm.
2.Wet oxidation for thick silicon dioxide films, ranging from 300 nm to 3 μm.
Thermal annealing processes below 1100°C.

Process / Testing Capabilities

Dry oxidation for high-quality SiO₂ films (below 300 nm)
Wet oxidation for thick SiO₂ films (300 nm to 3 μm)
Thermal annealing processes below 1100°C

Technical Specifications

Compatible with wafers up to 6 inches (and smaller sizes)
Temperature range: 300°C to 1100°C
Heating rate: 10°C/min
Dry oxidation using oxygen (O₂) process
Wet oxidation using a steam generator (steamer)

Dry oxidation is achieved by introducing oxygen (O₂) into the chamber, while wet oxidation is carried out using steam generated by a steam generator. The quartz chamber is rapidly heated بواسطة the heater system, and nitrogen (N₂) can be used as an inert gas to enable high-temperature annealing processes.

Thermal oxidation of silicon substrates. Thermal annealing and other heat treatment processes

Only 3”–6” silicon wafers (round wafers) are allowed. Post-processed wafers are strictly prohibited

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FAQs

01

此设备可以用于后道样品吗？

严禁污染，禁止后道工艺样品进入。

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