Laser direct writing lithography machine
Laser direct writing
Operating
Model: DWL66+
Function: 600nm~Micron-level process capability photoresist direct writing function, overlay direct writing function and 3D grayscale lithography function
Engineer: Wang / +86-21-34206126-6005 / fdwang@1
Location: East Area,Lithography Zone ⅢA
Equipment ID: ELT3DWL01
  • Basic Equipment Information
  • Operating Principle
  • Typical Application Case
Main Application
  • Photoresist direct writing: Directly writing photoresist patterns ranging from sub-micron to micron scale on a substrate
  • Overlay aligning direct writing: Overlay aligning direct writing between multiple exposure processes with an alignment accuracy of 500nm
  • 3D grayscale lithography: Controlling laser energy levels through software to realize 3D photoresist structures on photoresist

 

Process/Testing Capabilitie
  • 15*15mm~8 inch wafer Lithography
  • Laser direct writing exposure mode
  • Maximum exposure area: 8 inches
  • 600 nm resolution (4mm writing head) 

 

Technical Specification
  • 1000nm resolution(10mm writing head)   
  • Single-machine alignment accuracy:100 nm
  • Writing speed: 150 mm²/min (10 mm writing head)
  • Writing speed: 13 mm²/min (4 mm writing head)
  • Supports 255-level grayscale exposure direct writing

 

As a maskless lithography technology, laser direct writing lithography uses a laser beam with variable intensity to perform variable-dose exposure on the photoresist material on the surface of a substrate. After development, the required patterns are formed on the surface of the photoresist layer. It enables high-precision processing without the need for fabricating masks, and is applicable to the processing of various materials, including glass, metals, silicon wafers, semiconductors, polymers, and others.

It can be applied to the processing of a variety of different materials, including glass, metal, silicon wafers, semiconductors, polymers, etc. It is widely used in fields such as microelectronics, biomedicine, optics and nanodevices, and can be used to fabricate microprocessors, sensors, microstructures, biochips, microfluidic chips, MEMS and other microelectronic devices.

1.The maximum sample size shall not exceed nine inches.

2.The minimum sample size is 1.5cm*1.5cm. Samples that are too small will cause difficulties in automatic focusing and are prone to colliding with the writing head during patterning!

3.Ensure that the exposed pattern is at least 0.5cm away from the edge of the sample.

4.Special attention for circular samples: Ensure that each patterning position is at least 0.5cm away from the nearest edge of the sample.

5.For exposed pattern arrays: Be sure to keep the outer periphery of the array at least 0.5cm away from the edge of the sample.

The list below shows FAQs (click a question to view the answer). If your question is not listed, you can leave a message using the link.
FAQs
  • 01
    The device experiences lag during use.

    Please initialize the stage.

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