快速真空热处理系统

（Rapid Thermal Processing Annealing System）

主要用途/ Application：

RTP-761SA为处理 8 寸晶圆的快速热处理系统，以红外线卤素灯管为热源，分由上、下、左、右同步辐射加热制品从而达到均匀的热处理制程,在真空条件下通入PN2,O,H2等工艺气体后可完成如离子注入后退火,修复损伤,特殊材料的应力释放等工艺。可以加工不含金属,有机物,光刻胶的8英寸及以下尺寸硅片。

The RTP-761SA is a rapid thermal processing (RTP) system designed for 8-inch wafers. It utilizes infrared halogen lamps as the heat source, which synchronously radiate heat from the upper, lower, left, and right directions to achieve uniform thermal processing. Under vacuum conditions, the system introduces process gases such as PN2 and O2 to perform critical semiconductor manufacturing steps, including post-implantation annealing, damage repair, and stress relief for specialized materials. This equipment is capable of processing 8-inch and smaller silicon wafers that are free of metals, organics, and photoresist.

 

设备工作原理简介/ Operating principle：

通过高强度的辐射加热与精准的温度控制，在极短时间内（秒至分钟级）完成对晶圆的热处理。

Through high-intensity radiation heating and precise temperature control, the thermal processing of the wafer is completed in an extremely short period of time (ranging from seconds to minutes).

 

工艺能力/ Capability：

工作温度:300-1250℃;

工艺温度均匀性：

600℃以上，+/-0.5%；600℃以下，+/-3℃;

温度重复性：+/-1℃;

升温速率： 30℃/s

Operating Temperature: 300–1250°C;

Process Temperature Uniformity:

Above 600°C: ±0.5%;Below 600°C: ±3°C;

Temperature Repeatability: ±1°C;

Heating Rate: 30°C/s;

 

技术指标/ Specifications：

RTO:100Å：100Å+/-5Å，重复性＜3%，离散度<5%;

RTP:控温精度：<2℃,温度均匀性+/-1%,重复性<1%;

RTO (Rapid Thermal Oxidation) at 100Å:

Thickness: 100Å ±5Å;

Repeatability: <3%;

Uniformity: <5%.

RTP (Rapid Thermal Processing):

Temperature Control Accuracy: <2°C;

Temperature Uniformity: ±1%;

Repeatability: <1%.

 

典型使用案例/ Typical scenario：

离子注入后退火：修复晶格损伤并激活掺杂剂（如As、B）。

氧化/氮化：快速生长超薄介电层（如SiO₂、Si₃N₄）。

应力释放：消除薄膜沉积或刻蚀后的机械应力。

Post-Implantation Annealing:

Repairs lattice damage and activates dopants (e.g., As, B).

Oxidation/Nitridation:

Rapidly grows ultra-thin dielectric layers (e.g., SiO₂, Si₃N₄).

Stress Relief:

Eliminates mechanical stress induced by thin-film deposition or etching processes.

 

设备类别/Facilities：热加工设备/ Thermal Process Equipment

设备编号/No.：EEI0RTP01

设备地点/Location： 外延/离子注入区 / Epitaxy/Ion Implantation Area

 

工艺工程师/Engineer in response:

姓名：李老师；邮箱：litq@sjtu.edu.cn；电话：021-34206126-6012

Name: Mr. Li, Email: litq@sjtu.edu.cn, Tel: 021-34206126-6012.

 

设备照片/Photos：