EVG510晶圆键合机

（EVG510 Wafer Bonding System）

主要用途/ Application：

EVG510是一种高精度的晶圆键合设备，主要用于半导体、微机电系统（MEMS）和光电子器件的制造。它支持多种键合工艺，包括热压键合、阳极键合、分子键合等，适用于硅、玻璃、金属等多种材料的键合。设备具有高精度的对准功能，能够实现晶圆和芯片的精密定位和贴合，确保键合界面的质量和气密性。EVG510广泛应用于科研和工业生产中，用于开发和制造高性能器件，如传感器、微流体设备和集成电路。

The EVG510 is a high-precision wafer bonding system primarily used in the manufacturing of semiconductors, micro-electromechanical systems (MEMS), and optoelectronic devices. It can perform various bonding processes, including thermo-compression bonding, anodic bonding, and molecular bonding, suitable for bonding materials such as silicon, glass, and metals. The system features high-precision alignment capabilities, allowing for accurate positioning and bonding of wafers and chips, ensuring the quality and hermeticity of the bonded interface. The EVG510 is widely used in research and industrial production for developing and manufacturing high-performance devices, such as sensors, microfluidic devices, and integrated circuits.

 

设备工作原理简介/ Operating principle：

1. 对准和定位：在进行键合之前，设备会通过高精度的对准系统，使两片晶圆或芯片达到精确的对齐位置。这一步对确保后续键合过程的准确性至关重要，尤其在多层结构中，精准的对准有助于提高器件的性能。
2. 键合过程：EVG510支持多种键合工艺，如热压键合、阳极键合和分子键合等。键合时，通过施加压力、温度或电场，使两片晶圆表面紧密接触并形成牢固的连接。例如，热压键合利用高温和压力促进材料界面间的原子扩散，达到牢固键合的效果；而阳极键合则通过电场引导玻璃和硅的化学反应来实现键合。
3. 气密性和质量控制：在键合过程中，EVG510能够严格控制压力、温度和键合时间等参数，确保键合界面达到高质量和气密性要求。这对于制造需要真空封装或保护敏感电子元件的器件尤为重要。

通过以上原理，EVG510能够实现高精度、高可靠性的晶圆键合，广泛应用于半导体、MEMS、光电子器件等领域的制造。。

1. Alignment and Positioning: Before bonding, the equipment uses a high-precision alignment system to accurately align two wafers or chips. This step is crucial for ensuring the accuracy of the subsequent bonding process, especially in multi-layer structures, where precise alignment helps improve device performance.
2. Bonding Process: The EVG510 can perform various bonding techniques, such as thermo-compression bonding, anodic bonding, and molecular bonding. During bonding, pressure, temperature, or an electric field is applied to make the surfaces of the two wafers come into close contact and form a solid connection. For example, thermo-compression bonding uses high temperature and pressure to promote atomic diffusion at the material interface, achieving a strong bond, while anodic bonding utilizes an electric field to drive a chemical reaction between glass and silicon to achieve bonding.
3. Hermeticity and Quality Control: Throughout the bonding process, the EVG510 can precisely control parameters such as pressure, temperature, and bonding time to ensure that the bonded interface meets high-quality and hermeticity standards. This is particularly important for manufacturing devices that require vacuum packaging or protection of sensitive electronic components.

Through these principles, the EVG510 achieves high-precision and reliable wafer bonding, making it widely used in the manufacturing of semiconductors, MEMS, optoelectronic devices, and other fields.

 

工艺能力/ Capability：

1、将两个或多个晶圆进行紧密的连接，可实现多个晶圆之间的高密度互联，特别是在3D IC封装中具有广泛的应用；

2、可支持包括阳极键合、共晶键合、热压键合等多种晶圆键合工艺；

3、可配套EVG-610光刻机实现晶圆对准、定位功能；

4、前期可配套等离子体、湿法、等工艺对于晶圆进行清洗Accuracy：3000rpm ±1 RPM

 

1、Closely bonding two or more wafers enables high-density interconnection between multiple wafers, with wide applications especially in 3D IC packaging.

2、It supports various wafer bonding processes, including anodic bonding, eutectic bonding, and thermo-compression bonding.

3、It can be used in conjunction with the EVG-610 lithography system to achieve wafer alignment and positioning functions.

4、In the preliminary stage, the wafers can be cleaned using plasma, wet processing, or other techniques.

 

技术指标/ Specifications：

1. 支持阳极（Si-Glass）键合、硅硅（Si-Si）直接键合、金属共晶键合、金属热压键合
2. 支持晶圆尺寸规格：支持6英寸、4英寸、3英寸
3. 底部水冷冷却，速率≥15℃/min
4. 最大键合压力：20kN
5. 键压力均匀性：≤±3%@6英寸
6. 上、下基板最高加热温度：550℃
7. 最大电压2000V
8. 最大堆叠厚度：4mm
9. 极限真空：≤1E-5mbar
10. 上、下基板升温速率：≥30℃/min

 

1. Supports anodic (Si-Glass) bonding, silicon-to-silicon (Si-Si) direct bonding, metal eutectic bonding, and metal thermo-compression bonding.
2. Compatible with wafer sizes: 6-inch, 4-inch, and 3-inch.
3. Bottom water-cooled cooling with a rate of ≥15°C/min.
4. Maximum bonding pressure: 20 kN.
5. Bonding pressure uniformity: ≤±3% @ 6-inch.
6. Maximum heating temperature for the upper and lower substrates: 550°C.
7. Maximum voltage: 2000 V.
8. Maximum stacking thickness: 4 mm.
9. Ultimate vacuum: ≤1E-5 mbar.
10. Heating rate for upper and lower substrates: ≥30°C/min.

 

典型使用案例/ Typical scenario:

设备类别/Facilities：封装设备/ Packaging Equipment

设备编号/No.：ELT2WBS01

设备地点/Location：东区光刻Ⅱ区(Canon)/ East Lithography II Area (Canon)

 

工艺工程师/Engineer in response:

姓名：张笛；邮箱：captianzhangdi@sjtu.edu.cn；电话：13651735947

Name: Di Zhang；Email：fdwang@sjtu.edu.cn; Tel: 13651735947.

 

设备照片/Photos：