Semilab SE-2000椭圆偏振光谱仪
(Semilab SE-2000 Spectroscopic Ellipsometer)
主要用途/ Application:
- 设备提供紫外-可见-近红外(245 nm~1700 nm) 波长下的椭圆偏振光谱测试,可用于探测单层或多层薄膜的折射率(n)、消光系数(k)及厚度等信息。采用光学反射模式,测量过程无损、快捷。
- 可用于半导体中的氧化硅薄膜、氮化硅、氮氧化硅、high-k介电材料(如HfO2等)、low-k材料、光刻胶、SOI、SiGe、SiC、多晶硅及应变硅等薄膜的测量;平板显示器中的IGZO、电致变色层;铁电材料等测量;用于AlGaN、GaN、InP等光电器件化合物半导体材料;以及太阳能电池中的透明导电物薄膜、纳米材料;OLED或OTFT中的有机薄膜的测量。
- 在超薄膜测量方面,可用于原子层沉积(ALD)生长的超薄介质膜测量,也可用于单层石墨烯等新型二维材料。
- 同时,设备配备有非接触式涡流测量模块,可对样品提供无损、快速的(导电/半导体)薄层方块电阻测试。
- 设备配有8英寸及以下兼容的自动样品台,可对样品进行快速的多点扫描,自动形成所测数据的三维分析图。
- The equipment provides ellipsometry spectrum measurement in ultraviolet-visible and near-infrared wavelength range (245 nm~1700 nm). It can be used to characterize the refractive index, extinction coefficient and thickness of the single-layer or multilayer films. Its reflection test mode ensures the measurement process is non-destructive and very fast.
- The equipment can be used for the measurement of silicon oxide film, silicon nitride, silicon oxynitride, high-k dielectric material (such as HfO2, etc), low-k material, photoresist, SOI, SiGe, SiC, polycrystalline silicon, strain silicon and other thin films in semiconductors; IGZO, electrochromic layer in flat panel displays; ferroelectric material; semiconductor material for optoelectronic devices such as AlGaN, GaN, InP; transparent conductive material and nano material in solar cells; organic film in OLED and OTFT.
- It can be used on ultra-thin dielectric films deposited by atomic layer deposition (ALD), and two-dimensional materials like single-layer graphene。
- Meanwhile, it is equipped with non-contact eddy current test module, which offers non-destructive and quick measurement of sheet resistance for conductor and semiconductor films.
- It is equipped with 8 inch sample chuck and can do automated sample mapping. 3D mapping analysis can be finished by software automatically.
设备工作原理简介/ Operating principle:
椭圆偏振光谱仪测量的是以小角度从薄膜反射的光,因此可以同时携带反射光的偏振和强度信息,从而对超薄(<10 nm)的薄膜和材料结构更复杂的薄膜具有更强的测试能力。椭偏仪的测量角度可以选择,在每一组测量角度下完成从深紫外至中红外的最宽光谱范围测量,利用先进的分析软件和强大的材料数据库,得到基底、单层和多层样品中每一层薄膜的厚度及光学特性。
配备非接触式涡流测量模块,当交流电在靠近一个导电样品的线圈中流动时,线圈的磁场会在材料中引起循环的电流,即涡流。涡流的大小与材料的导电性能密切相关,因此可以用涡流来测量样品的电导率。由于线圈和样品之间没有接触,因此涡流法属于无损测量。
The ellipsometry measures light reflected from the thin film at a small angle instead of a vertical incident and reflection. It can carry information of polarization as well as intensity of the reflected light. Therefore, it has strong ability for measuring ultra-thin films (< 10 nm) and complex multilayer structures, or new materials. The measurement angle of the ellipsometer can be adjusted. Under each group of measurement angles, spectrum ranging from deep ultraviolet to mid infrared can be measured. Using advanced analysis software and powerful material database, the thickness and optical characteristics of each film in substrate, single layer and multi-layer samples can be obtained.
The ellipsometer is equipped with non-contact eddy current measurement module, when an AC current flows in the coil in close proximity to a conducting material, the magnetic field of the coil will induce circulating current in the material, namely eddy current. The conductivity of a material has a very direct effect on the eddy current flow, so eddy current can be used to measure the conductivity of samples. Since there is no contact between the coil and the sample, eddy current method is non-destructive.
工艺能力/ capability:
- 样品尺寸:8英寸及以下;
- 自动样品台;
- 自动变角度测量;
- 获得每层薄膜的n,k及厚度信息;
- 非接触式涡流薄层方块电阻测量。
- Sample size: 8 inch and below;
- Automatic sample chuck;
- Automatic angle adjustment;
- Obtain the n, k and thickness of each layer of film in the structure;
- Non-contact eddy current sheet resistance
技术指标/ Specifications:
- 薄膜厚度测试范围:0~3 μm;
- 厚度准确性(10次测量):≤±5Å(120 nm SiO2/Si标样);
- 厚度重复性(10次测量):≤2Å(120 nm SiO2/Si标样);
- 折射率准确性(10次测量):≤±009(120 nm SiO2/Si标样);
- 折射率测试重复性(10次测量):≤002(120 nm SiO2/Si标样);
- 消光系数测试重复性(10次测量):1sigma<2%(120 nm SiO2/Si标样);
- 图形测试区域不小于200 μm;
- 可见光部分探测波长范围:245 nm~990 nm;
- 近红外部分探测波长范围:900 nm~1700 nm;
- 自动变角的角度重复性≤01°;
- 非接触涡流方块电阻测试范围:2 Ohm/sq-100 Ohm/sq。。
- Film thickness test range: 0 ~ 3 μ m;
- Thickness accuracy (10 times of measurements): ≤± 5 Å (120 nm SiO2 / Si standard sample);
- Thickness repeatability (10 times of measurements): ≤ 2 μ (120 nm SiO2 / Si standard sample);
- Refractive index accuracy (10 times of measurement): ≤ ± 0.009 (120 nm SiO2 / Si standard sample);
- Repeatability of refractive index test (10 times of measurements): ≤002 (120 nm SiO2 / Si standard sample);
- Repeatability of extinction coefficient test (10 times of measurements): 1 sigma < 2% (120 nm SiO2 / Si standard sample);
- Pattern test area shall not be less than 200 μ m;
- The detection wavelength of visible light: 245 nm ~ 990 nm;
- The detection wavelength of near infrared light:900 nm ~ 1700 nm;
- The angle repeatability of automatic angle adjustment: ≤01 °;
- Test range of non-contact eddy current sheet resistance: 2 ohm/sq-100 ohm/sq.
典型使用案例/ Typical scenario:
- 可提供多层薄膜各层的拟合曲线:(下图是SOI基片上光刻胶样品的单点测试结果,从拟合曲线可以分析出光刻胶、顶硅、二氧化硅这三层薄膜的厚度及光学常数,其中光刻胶的厚度为64.6 nm。)
Fitting curve of each layer of multilayer film can be provided:(Figure below shows single point measurement on PR film coated on SOI substrate, the thickness and optical constant of the photoresist, top silicon, and box layer can be obtained. The thickness of PR is 64.6 nm)
- 6寸硅片上ALD氧化硅厚度的面扫描:(下图是该样品的9点mapping图,显示了上层氧化硅的厚度分布,由ALD生长的这层氧化硅厚度大约为16 nm。)
Thickness mapping of ALD oxide on 6 inch wafer:(Figure below was 9 points thickness mapping of silicon oxide layer grown by ALD, the thickness of the oxide is 16 nm. )
设备编号/No.:WT1SELP01
设备分类/ Facilities:测试设备/ Test Euipment;
工艺工程师/Engineer in response:
姓名:瞿敏妮;邮箱:minni.qu@sjtu.edu.cn;电话:021-34207734-8003
Name: Minni Qu;Email:minni.qu@sjtu.edu.cn; Tel: 021-34207734-8003.
设备照片/Photos: