SUSS MA8/BA8双面对准光刻机

（SUSS MA8/BA8 Double-sided Mask Aligner）

主要用途/ Application：

微纳结构与器件图形光刻

Graphical lithography of micro and nanostructures and devices

 

设备工作原理简介/ Operating principle：

工作原理是通过控制光强和时间，将掩模版上的图案曝光在旋涂好的光敏材料上，显影后实现将图案转移到基底上。

By controlling the light intensity and time, the pattern on the mask plate is exposed to the spin-coated photosensitive material, and the transfer of the pattern to the substrate is realized after development.

 

工艺能力/ Capability：

分辨率0.8um，正面对准精度±0.5 um，背面对准精度±1um

Resolution 0.8um, Top alignment accuracy ±0.5 um, Backside alignment accuracy ±1um

 

技术指标/ Specifications：

分辨率0.8um，正面对准精度±0.5 um，背面对准精度±1um

Resolution 0.8um, Top alignment accuracy ±0.5 um, Backside alignment accuracy ±1um

 

设备类别/Facilities：光刻/图形化设备/ Lithography/Patterning Equipment

设备编号/No.：ELT3MA801

设备地点/Location：东区光刻ⅢA区/ East Lithography IIIA Area

 

工艺工程师/Engineer in response:

姓名：王凤丹；邮箱：fdwang@sjtu.edu.cn；电话：021-34206126-6005

Name: Fengdan Wang；Email：fdwang@sjtu.edu.cn; Tel: 021-34206126-6005.

 

设备照片/Photos：