PVA-Tepla微波等离子去胶机(兼容SU-8及PI干法去胶)
(PVA TePla IoN Wave 10 Gas Plasma System)
主要用途/ Application:
- 用于8寸及以下的晶圆(SOI、SI、玻璃、铜片等其他半导体材料)正性及负性光刻胶去胶。
- 聚酰亚胺光刻胶(PI)去胶。
- 有机物去除。
- 基片表面等离子改性(02\Ar)
- For positive and negative photoresist stripping from up to 8 inch wafers (SOI, SI, glass, copper and other semiconductor materials).
- Polyimide photoresist stripping (PI).
- Organic matter removal.
- Substrate surface plasma modification (02 \ Ar)
设备工作原理简介/ Operating principle:
通过气体发生电离反应用以轰击光刻胶、聚酰亚胺等有机物,以达到去胶目的。
Microwave generates high density plasma to bombard the photoresist, polyimide, and other organic matters, for a complete and fast removal.
工艺能力/ capability:
- 晶圆尺寸:8寸及以下(含不规则)
- 晶圆材料:SOI、SI、玻璃、铜片等其他半导体材料(具体咨询相关工艺工程师)
- 正性及负性光刻胶去胶。
- SU-8负性光刻胶去胶。
- 聚酰亚胺光刻胶(PI)去胶。
- 有机物去除。
- 基片表面等离子改性(02\Ar)
- Wafer size: 8 inches or less (including irregularities)
- Wafer materials: SOI, SI, glass, copper and other semiconductor materials
- Positive and negative photoresist stripping
- Su-8 negative photoresist stripping
- Polyimide photoresist stripping (PI)
- Organic material removal
- Substrate surface plasma modification (02 \ Ar)
典型使用案例/ Typical scenario:
SU-8负性光刻胶(100um)去胶图示
Removal of negative photoresist demo SU-8 (100um)
设备编号/No.: WF2PION01
设备分类/ Facilities:干法刻蚀设备/Dry Etching Equipment
工艺工程师/Engineer in response:
姓名:张笛;邮箱:captianzhangdi@sjtu.edu.cn;电话:021-34206126-6005
Name: Di Zhang;Email:captianzhangdi@sjtu.edu.cn; Tel: 021-34206126-6005.
设备照片/Photos: