有机化学气相沉积系统

（Molecular Vapor Deposition）

主要用途/ Application：

1. 该设备可在气相环境中对硅片、玻璃片等半导体兼容和生物兼容的衬底基片的高深宽结构进行表面修饰改性，获得非常均一且单一分子层薄膜的疏水表面、亲水表面和特定官能团功能性表面，以进行相关的半导体实验和生物化学。该设备可与纳米压印光刻设备配套使用，提高纳米压印表面脱模质量，进一步提高纳米压印设备的图形加工能力。 3. 该设备为全功能表面改性系统，可执行ALD（原子层沉积）、CVD（化学气相沉积）及SAM（自组装分子层沉积）等多种沉积方式
2. 为了生长超薄、功能化、有机和无机薄膜而发明的MVD，与传统的液体沉积技术相比，具有更高的产量和更好的成本效益。这些薄膜用作润滑剂、保护性、疏水性、亲水性、生物相容性或反应性涂层。例如，在MEMS应用中，MVD薄膜通常用作抗粘连涂层，以改善器件性能，并提高器件的整体寿命。
3. MVD工艺技术在低温下通过气相沉积法在种类广泛的衬底上沉积超薄薄膜。这是同类中唯一的沉积技术。该平台是一个高度灵活的系统，可以同时运行类似ALD和CVD的工艺，根据基板的状况该平台可以提供特殊的等离子体集成工艺。MVD平台允许使用最多四个前驱气体，并且可以在一个批次中处理多个晶圆或其他三维对象。它可在高达2000:1的深宽比结构上提供极高的保形性。
4. The device can perform surface modification on the high depth and width structure of semiconductor compatible and biological compatible substrates such as silicon wafer and glass wafer in the gas phase environment, and obtain very uniform and single molecular layer film hydrophobic surface, hydrophilic surface and specific functional group functional surface, to carry out relevant semiconductor experiments and biochemistry. 2. The equipment can be used with nano-imprint lithography equipment to improve the quality of nano-imprint surface release, and further improve the graphics processing ability of nano-imprint equipment. 3. The device is a fully functional surface modification system, which can perform ALD (atomic layer deposition), CVD (chemical vapor deposition) and SAM (self-assembled molecular layer deposition) deposition and other deposition methods
5. The invention of MVD for the growth of ultra-thin, functional, organic and inorganic films has resulted in higher yields and better cost effectiveness compared to traditional liquid deposition techniques. These films are used as lubricant, protective, hydrophobic, hydrophilic, biocompatible or reactive coatings. For example, in MEMS applications, MVD films are often used as anti-adhesion coatings to improve device performance and to increase the overall lifetime of the device.
6. The MVD process technology deposits ultra-thin films on a wide range of substrates by low-temperature vapor deposition. This is the only deposition technique of its kind. The platform is a highly flexible system that can run ALD and CVD-like processes simultaneously and can provide special plasma integration processes depending on the condition of the substrate. The MVD platform allows the use of up to four precursor gases, and multiple wafers or other 3D objects can be processed in a single batch. It provides extremely high form preservation in aspect ratio structures up to 2000:1.

设备工作原理简介/ Operating principle：

通过将两种反应气体（或者蒸汽）以气体脉冲形式交替地引入反应器，依靠留在基底表面的吸附分子（如羟基或氨基）进行反应而生成薄膜。 由于每次参与反应的反应物局限于化学吸附于基底表面的分子，这使得 MVD 具有自限制生长特征。

By alternately introducing two reaction gases (or vapors) into the reactor in the form of gas pulses, the film is generated by the reaction of adsorbed molecules (such as hydroxyl groups or amino groups) left on the substrate surface. Since the reactants involved in each reaction are confined to molecules chemically adsorbed on the substrate surface, this gives MVD a self-limiting growth characteristic.

工艺能力/ Capability：

1. 疏水处理水滴角>100度
2. 超疏水处理水滴角>150度
3. 生物功能层、杂化膜沉积仍在开发，如有需求可以与工程师联系
4. 多层和加厚层沉积与工程师联系
5. ALD沉积与工程师联系
6. Hydrophobic treatment water drop Angle >100 degrees
7. Superhydrophobic treatment of water drop Angle >150 degrees
8. Biofunctional layer deposition is still under development. Please contact our engineers for your specific needs.
9. Contact the engineers for multilayer deposition
10. Contact the engineers for ALD deposition

 

技术指标/ Specifications：

1. 工作状态腔内真空度：≤ 2Pa (~0.015Torr)，到达以上真空度需求时间 < 10分钟
2. 腔室工作空间， 工作温度45-60度：可容纳25片8寸硅片卡匣二个或13片12寸硅片卡匣一个
3. 具有至少3组蒸汽传输管路，且温控可以实现室温至100℃ 连续可调可控，温度控制精度0. 1℃
4. 具有氧气等离子体功能，从而便于清洁激活硅片表面,并实现不同膜层的工艺转换清洁
5. 硅片经疏水分子淀积改性后，表面水滴接触角能达到100度-150以上；硅片经亲水处理后，表面水滴接触角小于10度 ；另具有生物功能层及多层，ALD沉积功能
6. Vacuum in the working state: ≤ 2Pa (~0.015Torr), the time required to reach the above vacuum is < 10 minutes
7. The working space of the chamber, the working temperature is 45-60 degrees: it can accommodate two 25-piece 8-inch silicon chip cassettes or one 13-piece 12-inch silicon chip cassette
8. It has at least 3 groups of steam transmission pipelines, and the temperature control can be continuously adjustable and controllable from room temperature to 100℃, and the temperature control accuracy is 0.1 ℃
9. It has the function of oxygen plasma, so as to facilitate the cleaning and activation of the surface of the silicon wafer, and realize the process conversion and cleaning of different film layers
10. After the silicon wafer is modified by the deposition of hydrophobic molecules, the surface water drop contact Angle can reach more than 100 degrees -150; After hydrophilic treatment, the contact Angle of water droplets on the surface of the silicon wafer is less than 10 degrees. In addition, it has biological functional layer and multi-layer, ALD deposition function

 

典型使用案例/ Typical scenario：

纳米压印抗黏层

Nano imprint anti – stick layers

 

设备类别/Facilities：薄膜沉积设备/ Thin Film Deposition Equipment

设备编号/No.：EFM4MVD01

设备地点/Location：东区薄膜Ⅳ区

 

工艺工程师/Engineer in response:

姓名：乌李瑛；邮箱：lynn_wu@sjtu.edu.cn；电话：021-34206126-6028

Name: Liying Wu；Email：lynn_wu@sjtu.edu.cn; Tel: 021-34206126-6028.

设备照片/Photos：