Zeiss Ultra Plus场发射扫描电子显微镜

（Zeiss Ultra Plus Field Emission Scanning Electron Microscope）

主要技术指标/Specifications:

  1. 分辨率：≤0.8nm@15V，≤1.6nm@1kV

Resolution: ≤0.8nm@15V，≤1.6nm@1kV

  1. 加速电压：0.02kV-30kV，优异的低电压性能适合观察导电性较差的样品；

Acceleration Voltage: 0.02kV-30kV, the excellent low-KV image favors the observation of sample that conducts electricity poorly.

  1. 探测器: 极靴内高效二次电子探测器及能量选择背散射电子探测器，样品室内高效二次电子探测器及角度选择背散射电子探测器，能同时获得二次电子图像和背散射电子像。

Detectors: In-lens EsB detector with filtering gird (0-1500V), high efficiency in-lens SE detector, chamber mounted Everhart-Thornley detector, integrated ASB detector

  1. 样品台：最大样品尺寸Φ200mm，5轴电动优中心样品台，可倾斜范围为-3～70°，连续旋转360°。

Specimen stage: Maximum sample size is Φ200mm 5-Axes motorized eucentric stage, T=-3 to 70°,R=360°( continuous);

  1. 配置EDS能谱仪可做微区成分分析；

EDS analyses provide the micro area constitution of materials.

  1. EBIC (电子束感生电流)可做半导体电子电路形貌及缺陷分析；

Electron Beam Induced Conductivity (EBIC) provides analyses of the morphology and defects of semiconductor integrated circuit;

7.离子溅射仪可镀金膜。

Sputter coater provides sputtering Au-film.

主要用途/Applications:

主要用于纳米材料的超高分辨的微观形貌观察和结合EDS能谱仪对材料进行微区成分分析等。

Mainly applied in high resolution observation of surface morphologies, and combination of EDS can analyze the micro area constitution of materials.

equip_cs_cfssmdzxwj