Zeiss Auriga场发射电子束/聚焦离子束双束系统

（ZEISS Auriga SEM/FIB Crossbeam System）

主要技术指标/Specifications:

  1. 分辨率：≤1.0nm@15V，≤1.9nm@1KV

Resolution: ≤1.0nm@15V，≤1.9nm@1KV

  1. 加速电压：0.1KV-30KV

Acceleration voltage: 0.1KV-30KV

  1. 电子枪:热场发射电子枪

Election gun: thermal field emission type

离子束：Ion Beam:

  1. 离子源种类：液态Ga离子源

Ion source type: liquid Ga+ source

  1. 分辨率：≤2.5nm@30kV

Resolution: ≤2.5nm@30kV

  1. 加速电压：1kV-30kV

Acceleration voltage: 1kV-30KV

辅助功能/Assistant functions:

  1. Pt,W,C,SiO2,XeF2气体注入系统：可在离子束、电子束诱导下进行可控沉积及增强或选择性刻蚀；

Multi-gas injection system (GIS) for Pt, W, C,SiO2,XeF2: Controllable deposition and enhancing or selective etching can be performed by e-beam or ion beam inducing;

  1. 牛津纳米机械手（含电学性能测试）：透射电镜取样系统，可提取FIB切割后的微小样品，配合FIB对纳米材料进行搬运、操纵；

Oxford Omniprobe Autoprobe Model Nanomanipulators including advanced electrical test accessory: Specimen preparation for transmission electron microscope;

  1. 三维成像系统：可实现对样品的自动切割，自动拍照以及所有照片叠加后的三维重构；

Nano Tomography Wizard for software guided parameter setting and automated acquisition of 3D data stacks;

  1. 微纳米加工系统：具备离子束沉积并加工复杂图形的软硬件系统；

Patterning of Complex nanostructures and high resolution imaging based on Zeiss nanoPatterning Engine: Package Containing all features of standard package plus enhancement for real-time review of patterning operations and end-pointing. Includes full ATLAS and ATLAS3D functionality;

  1. 具有电子束流枪，可对绝缘体材料无干扰加工或刻蚀；

Electron Flood Gun for neutralization of positive charges (FIB milling). Insulating materials micro-processing can be performed;

  1. 最大样品尺寸不大于150mm。极限真空：优于5×10-7Torr。

Maximum sample size is not more than 150mm. Ultimate vacuum: prior to 5×10-7Torr.

主要用途/Applications:

  双束系统中场发射扫描电镜主要用于观察、分析和记录材料的微观形貌，聚焦离子束用来对样品进行在微纳米尺度下的图形沉积、切割、刻蚀、透射样品制备及原子探针针尖加工等工作。

In SEM/FIB cross beam system, SEM is utilized in observation of surface morphologies, and FIB is used in the micro-processing including pattern deposition, slicing, milling, etching, TEM specimen preparation and probe fabrication, etc.

equip_bm1_cfsdzs